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VS-50WQ06FN-M3

P1-P3P4-P6P7-P7
VS-50WQ06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
1
Document Number: 93313
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 5.5 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Popular D-PAK outline
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-50WQ06FN-M3 surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
5.5 A
V
R
60 V
V
F
at I
F
See Electrical table
I
RM
35 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
7 mJ
Anode
1
3
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 5.5 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 320 A
V
F
5 A
pk
, T
J
= 125 °C 0.54 V
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-50WQ06FN-M3 UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 132 °C, rectangular waveform 5.5
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
320
10 ms sine or 6 ms rect. pulse 105
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.2 A, L = 10 mH 7 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.8 A
VS-50WQ06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
2
Document Number: 93313
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
5 A
T
J
= 25 °C
0.57
V
10 A 0.74
5 A
T
J
= 125 °C
0.54
10 A 0.68
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3
mA
T
J
= 125 °C 35
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.35 V
Forward slope resistance r
t
25.5 m
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 360 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
3.0 °C/W
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 50WQ06FN
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-50WQ06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
3
Document Number: 93313
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
2.4
0.2 0.4 0.6
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
10 20
50
60
30 40
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
2010 30 40 50
70
60
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-50WQ06FN-M3

Mfr. #:
Buy VS-50WQ06FN-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D-PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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