TBAW56,LM Datasheet TBAV70,LM, TBAS16,LM, TBAW56,LM | P1-P3

TBAS16,TBAW56,TBAV70

X34TTD-xxx-0x 2016-03-29

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TOSHIBA Switching Diodes Silicon Epitaxial

TBAS16,TBAW56,TBAV70

Silicon Switching diodes

Pb-free (RoHS compliant) package

Abusolute Maximum Ratings

(Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Peak reverse Voltage

V

RM

85

V

Reverse voltage

V

R

80

V

Average forward current (Note1)

I

O

215

mA

Peak forward current (Note1)

I

FM

500

mA

Non-repetitive peak forward surge current

(Note1,Note2)

I

FSM

2

A

Power dissipation (Note 3)

P

D

320

mW

Junction temperature

T

j

150

C

Storage temperature range

T

stg

−55 to 150

C

Note1 : Unit rating. Total rating = Unit rating x 1.5 (TBAW56,TBAV70)

Note2 : Measured with a 10ms pulse.

Note3 : Mounted on an FR4 board (25.4 mm  25.4 mm  1.6 mm, Cu Pad: 0.42 mm

2

x 3)

Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating

Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Products No.

Marking

Configuration

TBAS16

F3

single

TBAW56

A3

common anode

TBAV70

B3

common cathode

Weight : 0.009g (typ.)

SOT23

Marking on the Product

List of Products Number and Marking, Configuration

Example : TBAS16

3

F3

Equivalent Circuit (top view)

TBAS16

1

2

3

TBAW56

1

2

3

TBAV70

1

2

3

1

2

TBAS16,TBAW56,TBAV70

X34TTD-xxx-0x 2016-03-29

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Electrical Characteristics

(Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

V

F

(1)

I

F

= 1mA

―

715

mV

V

F

(2)

I

F

= 10mA

―

855

V

F

(3)

I

F

= 50mA

―

1000

V

F

(4)

I

F

= 150mA

―

1250

Reverse current

I

R(1)

V

R

= 25V

―

30

nA

I

R(2)

V

R

= 80V

―

0.5

μA

I

R(3)

V

R

= 25V, Tj = 150C

―

30

μA

I

R(4)

V

R

= 80V, Tj = 150C

―

100

μA

Total capacitance

C

T

V

R

= 1 V, f = 1MH

z

―

0.9

―

pF

Reverse recovery time

trr

I

F

= 10mA, Fig.1

―

1.6

4.0

ns

TBAS16,TBAW56,TBAV70

X34TTD-xxx-0x 2016-03-29

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Note: The above characteristics curves are presented for reference only and not

guaranteed by production test,unless otherwise noted.

Fig IF

- VF

Fig IR

- VR

0.1

1

10

100

1000

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

FORWARD CURRENT IF (mA)

FORWARD VOLTAGE VF (V)

85℃

25℃

Ta = 150℃

-40℃

0

1

10

100

0 20 40 60 80 100

REVERSE CURRENT IR (μA)

REVERSE VOLTAGE VR (V)

85℃

25℃

Ta = 125℃

-40℃

10

-1

10

-2

10

-3

10

-4

10

-5

TBAW56,LM

TBAW56,LM

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