2002 May 28 3
NXP Semiconductors Product data sheet
Schottky barrier diode BAT254
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD110 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.2
I
F
= 0.1 mA 240 mV
I
F
= 1 mA 320 mV
I
F
= 10 mA 400 mV
I
F
= 30 mA 500 mV
I
F
= 100 mA 800 mV
I
R
reverse current V
R
= 25 V; note 1; see Fig.3 2 μA
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100 Ω; measured at
I
R
= 1 mA; see Fig.5
5 ns
C
d
diode capacitance f = 1 MHz; V
R
= 1 V; see Fig.4 10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 315 K/W
