Characteristics STPS20SM120S
2/14 DocID022921 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.56 x I
F(AV)
+ 0.008 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at T
amb
= 25 °C,
unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 120 V
I
F(RMS)
Forward rms current 50 A
I
F(AV)
Average forward current 20 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sine-wave 220 A
P
ARM
(1)
Repetitive peak avalanche power T
j
= 125 °C, t
p
= 10 µs 900 W
V
ARM
(2)
Maximum repetitive peak avalanche voltage t
p
< 10 µs, T
j
< 125 °C, I
AR
< 6A 150 V
V
ASM
(2)
Maximum single-pulse peak avalanche voltage t
p
< 10 µs, T
j
< 125 °C, I
AR
< 6A 150 V
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(3)
150 °C
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible
avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche
specification”.
2. See Figure 9
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB and TO-220AB narrow leads 1.55
°C/W
TO-220FPAB 4
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 40 210 µA
T
j
= 125 °C - 15 40 mA
V
F
(2)
Forward voltage drop
T
j
= 125 °C I
F
= 5 A - 0.49 0.54
V
T
j
= 25 °C
I
F
= 10 A
-0.75
T
j
= 125 °C - 0.57 0.62
T
j
= 25 °C I
F
= 20 A - 0.89
T
j
= 125 °C - 0.65 0.72
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
