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MMDL914T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 9
1 Publication Order Number:
MMDL914T1/D
MMDL914T1G,
SMMDL914T1G,
MMDL914T3G
High-Speed Switching
Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
100 V
Forward Current I
F
200 mA
Non−Repetitive Peak Forward Surge
Current 60 Hz
I
FSM(surge)
500 mA
Repetitive Peak Forward Current
(Note 2)
I
FRM
1.0 A
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 1 s
I
FSM
36.0
18.0
6.0
3.0
0.7
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
T
A
= 25°C (Note 1)
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
635
°C/W
Junction and Storage Temperature T
J
, T
stg
−55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 Minimum Pad.
2. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, T
J
= 25°C prior to surge.
http://onsemi.com
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
1
CATHODE
2
ANODE
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5D M G
G
MMDL914T1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
5D = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MMDL914T3G SOD−323
(Pb−Free)
10,000 /
Tape & Reel
SMMDL914T1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
MMDL914T1G, SMMDL914T1G, MMDL914T3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100 mAdc)
V
(BR)
100 −
Vdc
Reverse Voltage Leakage Current
(V
R
= 20 Vdc)
(V
R
= 75 Vdc)
I
R
−
−
25
5.0
nAdc
mAdc
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
T
− 4.0
pF
Forward Voltage
(I
F
= 10 mAdc)
V
F
− 1.0
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
t
rr
− 4.0
ns
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMDL914T1G, SMMDL914T1G, MMDL914T3G
http://onsemi.com
3
100
0.2 0.4
V
F
, FORWARD VOLTAGE (V)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
10 20 30 40
50
0.68
0
V
R
, REVERSE VOLTAGE (V)
0.64
0.60
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
T
A
= -40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
Figure 5. Maximum Non−repetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
T
p
(mSec)
10.10.010.001
0
5
10
15
20
25
I
FSM
(A)
10
30
35
40
Based on square wave currents
T
J
= 25°C prior to surge
0.0001
P1-P3P4-P4

MMDL914T1G

Mfr. #:
Buy MMDL914T1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 100V 200mA
Lifecycle:
New from this manufacturer.
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