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FDZ4670

P1-P3P4-P6
tm
May 2007
©2007 Fairchild Semiconductor Corporation
FDZ4670 RevD
www.fairchildsemi.com
1
FDZ4670 N-Channel PowerTrench
®
MOSFET BGA
FDZ4670
N-Channel PowerTrench
®
MOSFET BGA
30V, 25A, 2.5mΩ
Features
Max r
DS(on)
= 2.5mΩ at V
GS
= 10V, I
D
= 25A
Max r
DS(on)
= 4.5mΩ at V
GS
= 4.5V, I
D
= 18.5A
Ultra-thin package: less than 0.85mm height when mounted to
PCB
Outstanding thermal transfer characteristics
Ultra-low gate charge x r
DS(on)
product
RoHS Compliant
General Description
Combining Farichild’s 30V PowerTrench process with state-of-
the-art BGA packaging, the FDZ4670 minimize both PCB space
and r
DS(on)
. This BGA MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, high current handing
capacity, ultra-low profile packaging, low gate charge and low
r
DS(on)
.
This MOSFET feature faster switching and lower gate charge
than oth
er MOSFETs with comparable r
DS(on)
specifications
resulting in DC/DC power supply designs and POL converters
with higher overall efficiency.
Applications
DC - DC Conversion
POL converters
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) 25
A
-Pulsed 60
P
D
Power Dissipation (Note 1a) 2.5
W
Power Dissipation (Note 1b) 1.25
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/WR
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 100
R
θJC
Thermal Resistance, Junction to Case 0.85
Devi
ce Marking Device Package Reel Size Tape Width Quantity
4670 FDZ4670 FLFBGA 3.5X4.0 13’’ 12mm 3000 units
Bottom
G
S
D
Top
Index slot
FLFBGA 3.5X4.0
FDZ4670 N-Channel PowerTrench
®
MOSFET BGA
www.fairchildsemi.com
2
©2007 Fairchild Semiconductor Corporation
FDZ4670 Rev.D
Electrical Characteristics T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250μA, V
GS
= 0V 30 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250μA, referenced to 25°C -30 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24V, V
GS
= 0V 1 μA
I
GSS
Gate to Source Leakage Current V
GS
= ±20V, V
DS
= 0V ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250μA 1 1.7 3 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250μA, referenced to 25°C 4.4 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 25A 1.9 2.5
mΩV
GS
= 4.5V, I
D
= 18.5A 3.0 4.5
V
GS
= 10V, I
D
= 25A, T
J
= 125°C 2.6 3.8
g
FS
Forward Transconductance V
DD
= 10V, I
D
= 25A 114 S
C
iss
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
2660 3540 pF
C
oss
Output Capacitance 1440 1920 pF
C
rss
Reverse Transfer Capacitance 180 270 pF
R
g
Gate Resistance f = 1MHz 1.0 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15V, I
D
= 1.0A,
V
GS
= 10V, R
GEN
= 6Ω
15 27 ns
t
r
Rise Time 11 20 ns
t
d(off)
Turn-Off Delay Time 50 80 ns
t
f
Fall Time 67 107 ns
Q
g
Total Gate Charge
V
GS
= 10V, V
DD
= 15V,
I
D
= 25A
40 56 nC
Q
gs
Gate to Source Charge 7 nC
Q
gd
Gate to Drain “Miller” Charge 6 nC
V
SD
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= 1.8A (Note 2) 0.7 1.2 V
t
rr
Reverse Recovery Time
I
F
= 25A, di/dt = 100A/μs
46 69 ns
Q
rr
Reverse Recovery Charge 28 42 nC
NOTES:
1. R
θJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θJC
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
b. 100°C/W when mounted on a
minimum pad of 2 oz copper.
a . 5 0 ° C / W w h e n m o u n t e d o n
a 1 in
2
pad of 2 oz copper.
FDZ4670 N-Channel PowerTrench
®
MOSFET BGA
www.fairchildsemi.com
3
©2007 Fairchild Semiconductor Corporation
FDZ4670 Rev.D
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1. On-Region Characteristics Figure 2. N o r m a l i z ed On - R es is ta nc e
vs Drain Current and Gate Voltage
Fi g ur e 3 . N o rma liz e d On - Re s is t a nc e
vs Junction Temperature
Figure 4. O n -R es is t an ce v s G at e to
Source Voltage
Figure 5. Transfer Characteristics Figure 6. S o ur ce t o D ra in D io de
Forward Voltage vs Source Current
0.0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
60
V
GS
= 3.5V
V
GS
= 6V
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
V
GS
= 4.5V
V
GS
= 3V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 102030405060
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
= 6V
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 10V
-50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
I
D
= 25A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
1
2
3
4
5
6
7
8
9
10
I
D
= 25A
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
10
20
30
40
50
60
V
DS
= 5V
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
60
P1-P3P4-P6

FDZ4670

Mfr. #:
Buy FDZ4670
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-CH PowerTrench MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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