DN350T05-7

DN350T05
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DP350T05)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS
Compliant "Green" Device (Notes 2, 3 and 4)
Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish annealed over
Alloy 42 leadframe. Solderable per MIL-STD-202,
Method 208
Marking Information: K3S, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0° 8°
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B
C
C
B
H
G
D
K
E
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
350 V
Collector-Emitter Voltage
V
CEO
350 V
Emitter-Base Voltage
V
EBO
5.0 V
Continuous Collector Current
I
C
500 mA
Power Dissipation (Note 1)
P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product is manufactured with Green Molding Compound and does not contain Halogens or Sb
2
O
3
Fire Retardants.
DS30625 Rev. 8 - 2 1 of 4
www.diodes.com
DN350T05
© Diodes Incorporated
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Electrical Characteristics @T
A
= 25°C unless otherwise specified
DS30625 Rev. 8 - 2 2 of 4
www.diodes.com
DN350T05
© Diodes Incorporated
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
350
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
350
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
V
I
E
= 10μA, I
C
= 0
Collector Cutoff Current
I
CBO
50 nA
V
CB
= 250V, I
E
= 0
Collector Cutoff Current
I
EBO
50 nA
V
CE
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
20
30
30
20
15
200
200
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.30
0.35
0.50
1.0
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 20mA, I
B
= 2.0mA
I
C
= 30mA, I
B
= 3.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.75
0.80
0.90
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 20mA, I
B
= 2.0mA
I
C
= 30mA, I
B
= 3.0mA
Base-Emitter On Voltage
V
BE(ON)
2.0 V
I
C
= 100mA, V
CE
= 10V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
7.0 pF
V
CB
= 20V, f = 1.0MHz, I
E
= 0
Transition Frequency
f
T
50
MHz
V
CE
= 10V, I
C
= 20mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
100
150
200
250
300
50
0
110
0
50
100
25 50
75 100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
400
0
100
I , COLLECTOR CURRENT (mA)
Fig. 2,
C
DC Current Gain vs. Collector Current
I , COLLECTOR CURRENT (mA)
Fig. 3, Collector-Emitter Saturation Voltage
vs. Collector Current
C
V,
C
O
LLE
C
T
O
R
E
M
I
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
0.01
1
10
0.1
10
20 30
40
50 60
70
80 90
100
0.1
0
10 20
30
40 50 60
80
9070
100
1
I , COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Saturation Voltage
vs. Collector Current
C
V , BASE EMITTER
SATURATION VOLTAGE (V)
BE(SAT)
1
23
4
5
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
V , REVERSE VOLTAGE (V)
Fig. 6, Capacitance vs. Reverse Voltage
R
60
50
40
30
10
20
1
10 100
I , COLLECTOR CURRENT (mA)
Fig. 5, Base-Emitter On Voltage vs. Collector Current
C
0.1
0.2
0.3
0.4
0.5
0.9
0.8
0.7
0.6
V , BASE EMITTER ON VOLTAGE (V)
BE(ON)
Ordering Information (Note 6)
DS30625 Rev. 8 - 2 3 of 4
www.diodes.com
DN350T05
© Diodes Incorporated
Device
Packaging Shipping
SOT-23 3000/Tape & Reel
DN350T05-7
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3S = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K3S
YM
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

DN350T05-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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