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MS2421

P1-P3P4-P5
MS2421
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation 875 W
V
CES
Collector-Emitter Voltage 65 V
V
CBO
Collector-Base Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
T
J
Junction Temperature
200
ºC
I
C
Device Current 22 A
T
STG
Storage Temperature
-65 to +200
ºC
Thermal DataThermal Data
R
TH(J-C)
Junction-case Thermal Resistance 0.20
°°C/W
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
• 350 W (typ.) IFF 1030 – 1090 MHz
• 300 W (min.) DME 1025 – 1150 MHz
• 290 W (typ.) TACAN 960 – 1215 MHz
• 960 – 1215 MHz
• GOLD METALLIZATION
• P
OUT
= 300W MINIMUM
• G
P
= 6.3 dB MINIMUM
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• EMITTER BALLASTED
• COMMON BASE
The MS2421 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2421 is designed
with internal input/output matching resulting in improved
broadband performance and low thermal resistance.
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
MS2421
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
BV
CBO
I
C
= 10 mA I
E
= 0 mA 65 --- --- V
BV
EBO
I
E
= 5.0 mA I
C
= 0 mA 3.5 --- --- V
I
CES
V
CE
= 50 V --- --- 25 mA
HFE V
CE
= 5 V I
C
= 500mA 10 --- 200 mA
DYNAMICDYNAMIC
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
P
OUT
f =1025 - 1150 MHz P
IN
= 70W V
CE
=50V 300 --- --- W
G
P
f =1025 - 1150 MHz P
IN
= 70W V
CE
=50V 6.3 --- --- dB
ηη
C
f =1025 - 1150 MHz P
IN
= 70W V
CE
=50V 35 --- --- %
Conditions
Pulse Width = 10 µµs Duty Cycle = 1%
IMPEDANCE DATAIMPEDANCE DATA
FREQ
Z
IN
(Ω)Ω) Z
CL
(Ω)Ω)
960 MHz 2.6 + j6.0 2.5 – j6.0
1090 MHz 7.4 + j4.4 2.4 – j6.2
1215 MHz 4.3 + j1.1 2.5 – j4.9
Pin = 70W Vce = 50V
MS2421
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TYPICAL PERFORMANCETYPICAL PERFORMANCE
IMPEDANCE DATAIMPEDANCE DATA
P1-P3P4-P5

MS2421

Mfr. #:
Buy MS2421
Manufacturer:
Microchip / Microsemi
Description:
RF Bipolar Transistors Bipolar/LDMOS Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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