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BTA140-800,127

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BTA140-800
4Q Triac
BTA140-800 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 12 November 2013 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle; Fig. 6 - - 1 K/WR
th(j-mb)
thermal resistance
from junction to
mounting base
half cycle; Fig. 6 - - 1.4 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 60 - K/W
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
NXP Semiconductors
BTA140-800
4Q Triac
BTA140-800 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 12 November 2013 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 6 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 10 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 11 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 23 70 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- 8 40 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- 13 60 mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- 18 40 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 8
- 15 60 mA
V
D
= 12 V; T
j
= 25 °C; T2+; Fig. 9 - 7 60 mAI
H
holding current
V
D
= 12 V; T
j
= 25 °C; T2-; Fig. 9 - 12 60 mA
V
T
on-state voltage I
T
= 30 A; T
j
= 25 °C; Fig. 10 - 1.3 1.55 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
100 300 - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 9 A/
ms; I
T
= 25 A; gate open circuit
- 10 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 30 A; V
D
= 800 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
- 2 - µs
NXP Semiconductors
BTA140-800
4Q Triac
BTA140-800 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 12 November 2013 8 / 13
-50 1501000 50
003aad998
2
3
1
4
5
0
(2)
(4)
(3)
(1)
T
j
(°C)
I
GT(25°C)
I
GT
(1) T2+ G+
(2) T2+ G-
(3) T2- G-
(4) T2- G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
003aae000
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
003aae001
1
2
3
0
I
H
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
003aad990
0
20
40
60
80
0 0.5 1 1.5 2 2.5
V
T
(V)
I
T
(A)
(1) (2) (3)
V
o
= 1.073 V; R
s
= 0.015 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
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BTA140-800,127

Mfr. #:
Buy BTA140-800,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs 800V 25A
Lifecycle:
New from this manufacturer.
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