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SIZ710DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Document Number: 65733
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
7
Vishay Siliconix
SiZ710DT
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
1
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
10
-1
10
-4
0.02
Single Pulse
0.1
0.2
0.05
www.vishay.com
8
Document Number: 65733
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ710DT
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=10Vthru4V
V
GS
=3V
V
GS
=2V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
2
4
6
8
10
0 8 16 24 32 40
V
DS
=16V
I
D
=20A
V
DS
=5V
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
500
1000
1500
2000
2500
3000
0 5 10 15 20
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
I
D
=20A
V
GS
=10V,V
GS
=4.5V
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
Document Number: 65733
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
9
Vishay Siliconix
SiZ710DT
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 μA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0246810
T
J
= 25 °C
I
D
=20A
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
10
20
30
40
50
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
0.1
1ms
10 s
10 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
100 μs
DC
BVDSS Limited
1s
100 ms
Limited by R
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specied
- Drain Current (A)
I
D
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ710DT-T1-GE3

Mfr. #:
Buy SIZ710DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
Lifecycle:
New from this manufacturer.
Delivery:
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