FYPF1004DNTU

©2000 Fairchild Semiconductor International Rev. A, July 2000

FYPF1004DN

SCHOTTKY BARRIER RECTIFIER

Absolute Maximum Ratings

T

C

=25

°

°°

°

C unless otherwise noted

Thermal Characteristics

Electrical Characteristics

(per diode) T

C

=25

°

°°

°

C unless otherwise noted

* Pulse Test: Pulse Width=300

µ

s, Duty Cycle

=

2%

Symbol Parameter Value Units

V

RRM

Maximum Repetitive Reverse Voltage 40 V

V

R

Maximum DC Reverse Voltage 40 V

I

F(AV)

Maximum Average Rectified Current @ T

C

= 130

°

C10 A

I

FSM

Maximum Forward Surge Current (per diode)

60Hz Single Half-Sine Wave

80 A

T

J,

T

STG

Operating Junction and Storage Temperature -40 to +150

°

C

Symbol Parameter Value Units

R

θ

JC

Maximum Thermal Resistance, Junction to Case (per diode) 4.5

°

C/W

Symbol Parameter Value Units

V

FM

*

Maximum Instantaneous Forward Voltage

I

F

= 5A

I

F

= 5A

I

F

= 10A

I

F

= 10A

T

C

= 25

°

C

T

C

= 125

°

C

T

C

= 25

°

C

T

C

= 125

°

C

0.55

0.49

0.67

0.65

V

I

RM

*

Maximum Instantaneous Reverse Current

@ rated V

R

T

C

= 25

°

C

T

C

= 125

°

C

1

40

mA

FYPF1004DN

Features

• Low forward voltage drop

• High frequency properties and switching speed

• Guard ring for over-voltage protection

Applications

• Switched mode power supply

• Freewheeling diodes

TO-220F

1 2 3

1. Anode 2.Cathode 3. Anode

©2000 Fairchild Semiconductor International

Rev. A, July 2000

FYPF1004DN

Typical Characteristics

Figure 1. Typical Forward Voltage Characteristics

(per diode)

Figure 3. Typical Junction Capacitance

(per diode)

Figure 5. Forward Current Derating Curve

Figure 2. Typical Reverse Current

vs. Reverse Voltage (per diode)

Figure 4. Thermal Impedance Characteristics

(per diode)

Figure 6. Non-Repetive Sureg Current

(per diode)

0.01

0.1

1

10

0.0 0.5 1.0 1.5

T

J

=125

o

C

T

J

=75

o

C

T

J

=25

o

C

Forward Voltage Drop, V

F

[V]

Forward Current, I

F

[A]

0 10203040

80

90

100

200

300

400

500

600

700

T

J

=25

o

C

Junction Capacitance, C

J

[pF]

Reverse Voltage, V

R

[V]

0 20406080100120140160

0

2

4

6

8

10

12

DC

Average Forward Current, I

F(AV)

[A]

Case Temperature, T

C

[

o

C]

0 10203040

0.001

0.01

0.1

1

10

100

T

J

=150

o

C

T

J

=125

o

C

T

J

=75

o

C

T

J

=25

o

C

Reverse Current, I

R

[mA]

Reverse Voltage, V

R

[V]

100µ 1m 10m 100m 1 10

1

10

Transient Thermal Impedance [

o

C/W]

Pulse Duration [s]

1 10 100

0

20

40

60

80

100

Max. Forward Surge Current, I

FSM

[A]

Number of Cycles @ 60Hz

©2000 Fairchild Semiconductor International

Rev. A, July 2000

FYPF1004DN

Package Dimensions

Dimensions in Millimeters

TO-220F

(7.00)

(0.70)

MAX1.47

(30°)

#1

3.30

±0.10

15.80

±0.20

15.87

±0.20

6.68

±0.20

9.75

±0.30

4.70

±0.20

10.16

±0.20

(1.00x45°)

2.54

±0.20

0.80

±0.10

9.40

±0.20

2.76

±0.20

0.35

±0.10

ø3.18

±0.10

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

0.50

+0.10

–0.05

FYPF1004DNTU

Mfr. #:

Buy FYPF1004DNTU

Manufacturer:

ON Semiconductor / Fairchild

Description:

Schottky Diodes & Rectifiers Schottky Barrier

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

FYPF1004DNTU