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MT18JDF1G72PZ-1G9E1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 9: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, SR) 240-Pin DDR3 VLP RDIMM
DRAM Operating Conditions
PDF: 09005aef84dd570c
jdf18c1gx72pz.pdf - Rev. C 4/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 10: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revisions E and J)
Values are for the MT41J1G4 DDR3 SDRAM only and are computed from values specified in the 4Gb (1 Gig x 4) component
data sheet
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1116 990 846 792 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1170 1098 1026 954 mA
Precharge power-down current: Slow exit I
DD2P0
324 324 324 324 mA
Precharge power-down current: Fast exit I
DD2P1
666 576 504 468 mA
Precharge quiet standby current I
DD2Q
630 576 504 468 mA
Precharge standby current I
DD2N
630 576 522 504 mA
Precharge standby ODT current I
DD2NT
756 702 630 576 mA
Active power-down current I
DD3P
738 684 630 576 mA
Active standby current I
DD3N
738 684 630 576 mA
Burst read operating current I
DD4R
2952 2646 2340 2034 mA
Burst write operating current I
DD4W
2916 2124 1854 1566 mA
Refresh current I
DD5B
2916 2790 2664 2592 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
360 360 360 360 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
450 450 450 450 mA
All banks interleaved read current I
DD7
4518 3960 3420 2880 mA
Reset current I
DD8
360 360 360 360 mA
8GB (x72, ECC, SR) 240-Pin DDR3 VLP RDIMM
I
DD
Specifications
PDF: 09005aef84dd570c
jdf18c1gx72pz.pdf - Rev. C 4/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Registering Clock Driver Specifications
Table 11: Registering Clock Driver Electrical Characteristics
SSTE32882 devices or equivalent
Parameter Symbol Pins Min Nom Max Units
DC supply voltage V
DD
– 1.425 1.5 1.575 V
DC reference voltage V
REF
– 0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
DC termination
voltage
V
TT
– 0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
AC high-level input
voltage
V
IH(AC)
Control, command,
address
V
REF
+ 175mV – V
DD
+ 400mV V
AC low-level input
voltage
V
IL(AC)
Control, command,
address
–0.4 – V
REF
- 175mV V
DC high-level input
voltage
V
IH(DC)
Control, command,
address
V
REF
+ 100mV – V
DD
+ 0.4 V
DC low-level input
voltage
V
IL(DC)
Control, command,
address
–0.4 – V
REF
- 100mV V
High-level input
voltage
V
IH(CMOS)
RESET#, MIRROR 0.65 × V
DD
– V
DD
V
Low-level input
voltage
V
IL(CMOS)
RESET#, MIRROR 0 – 0.35 × V
DD
V
Differential input
crosspoint voltage
range
V
IX(AC)
CK, CK#, FBIN, FBIN# 0.5 × V
DD
- 175mV 0.5 × V
DD
0.5 × V
DD
+ 175mV V
Differential input
voltage
V
ID(AC)
CK, CK# 350 – V
DD
+ TBD mV
High-level output
current
I
OH
Err_Out# – – TBD mA
Low-level output
current
I
OL
Err_Out# TBD – TBD mA
Note:
1. Timing and switching specifications for the register listed are critical for proper opera-
tion of the DDR3 SDRAM RDIMMs. These are meant to be a subset of the parameters for
the specific device used on the module.
8GB (x72, ECC, SR) 240-Pin DDR3 VLP RDIMM
Registering Clock Driver Specifications
PDF: 09005aef84dd570c
jdf18c1gx72pz.pdf - Rev. C 4/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

MT18JDF1G72PZ-1G9E1

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Buy MT18JDF1G72PZ-1G9E1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 8GB 240RDIMM
Lifecycle:
New from this manufacturer.
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