OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STPS1150A

P1-P3P4-P6P7-P9P10-P11
This is information on a product in full production.
April 2014 DocID9472 Rev 6 1/11
STPS1150
Power Schottky rectifier
Datasheet
-
production data
Features
• Negligible switching losses
• Low forward voltage drop for higher efficiency
and extended battery life
• Low thermal resistance
• Surface mount miniature package
• Avalanche capability specified
• ECOPACK
®
2 compliant component
Description
These 150 V power Schottky rectifiers are suited
for switch mode power supplies on up to 24 V
rails and high frequency converters.
Packaged in STmite/STmite flat, SMA and axial,
this device is intended for use in consumer and
computer applications like TV, STB, PC and DVD
where low drop forward voltage is required to
reduce power dissipation.
K
A
K
A
K
A
SMA
(JEDEC DO-214AC)
STPS1150A
DO-41
STPS1150
STmite
(JEDEC DO-216AA)
STPS1150M
STmite flat
STPS1150MF
Table 1. Device summary
Symbol Value
I
F(AV)
1 A
V
RRM
150 V
T
j
(max) 175 °C
V
F
(max) 0.67 V
www.st.com
Characteristics STPS1150
2/11 DocID9472 Rev 6
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.59 x I
F(AV)
+ 0.08 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 150
V
I
F(RMS)
Forward rms current 15
A
I
F(AV)
Average forward current
STmite/flat T
c
= 150 °C δ = 0.5
1
A
SMA T
L
= 150 °C δ = 0.5
DO-41 T
L
= 150 °C δ = 0.5
I
FSM
Surge non repetitive forward
current
STmite/flat
t
p
= 10 ms sinusoidal
50
A
SMA 50
DO-41 75
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25 °C 1500
W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. condition to avoid runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
<
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case STmite/STmite flat 30
°C/W
R
th(j-l)
Junction to lead
SMA 30
Lead length = 10 mm DO-41 30
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
0.2 1.0 µA
T
j
= 125 °C 0.2 1.0 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
0.78 0.82
V
T
j
= 125 °C 0.62 0.67
T
j
= 25 °C
I
F
= 2 A
0.85 0.89
T
j
= 125 °C 0.69 0.75
1. t
p
= 5 ms, δ < 2%
2. t
p
= 380 µs, δ < 2%
DocID9472 Rev 6 3/11
STPS1150 Characteristics
11
Figure 1. Average forward power
dissipation versus average
forward current
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
P (W)
F(AV)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I (A)
F(AV)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.05
δ = 0.1
δ = 0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150 175
T
δ = t / T
p
t
p
I(A)
F(AV)
R
th(j-a)
= R
th(j-l)
R
th(j-a)
= 120 °C/W
Figure 3. Normalized avalanche power derating
versus pulse duration
Figure 4. Normalized avalanche power derating
versus junction temperature
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t
p
)
P (1 µs)
ARM
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(T
j
)
P (25 °C)
ARM
ARM
Figure 5. Non repetitive surge peak
forward current versus overload duration -
maximum values
Figure 6. Non repetitive surge peak
forward current versus overload duration -
maximum values
0
2
4
6
8
10
12
14
16
18
20
1.E-03 1.E-02 1.E-01 1.E+00
STmite
I (A)
M
t(s)
I
M
t
δ = 0.5
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
P1-P3P4-P6P7-P9P10-P11

STPS1150A

Mfr. #:
Buy STPS1150A
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 1.0 Amp 150 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet