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MBRS410ET3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2005
August, 2017 −Rev. 5
1 Publication Order Number:
MBRS410ET3/D
MBRS410ET3
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are AC−DC and DC−DC converters, reverse
battery protection, and “ORing” of multiple supply voltages and any
other application where performance and size are critical.
Features
• Very Low V
F
Accompanied by Low I
R
• 1st in the Market Place with a 10 V
R
Schottky Rectifier
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Designed for Low Leakage
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
• ESD Ratings: Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
10 V
Average Rectified Forward Current
(@ T
L
= 130°C)
I
O
4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
250 A
Operating Junction Temperature T
J
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
Package
Shipping
†
ORDERING INFORMATION
MBRS410ET3 SMC 2500/Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES, 10 VOLTS
www.onsemi.com
B4E1 = Specific Device Code
A = Assembly Location*
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
MBRS410ET3G
SMC
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SMC 2−LEAD
CASE 403AC
AYWW
B4E1G
G
*The Assembly Location code (A) is front side optional.
In cases where the Assembly Location is stamped in
the package, the front side assembly code may be
blank.
MBRS410ET3
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol
5 mm x 5 mm
(Note 2)
1 Inch x 1/2 inch Unit
Thermal Resistance,
Junction−to−Lead
Thermal Resistance,
Junction−to−Ambient
R
q
JL
R
q
JA
12
109
7.0
59
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
V
F
T
J
= 25°C T
J
= 100°C V
(I
F
= 2.0 A)
(I
F
= 4.0 A)
(I
F
= 8.0 A)
0.475
0.500
0.525
0.370
0.395
0.430
Maximum Instantaneous Reverse Current (Note 1) I
R
T
J
= 25°C T
J
= 100°C
mA
(Rated dc Voltage, V
R
= 5.0 V)
(Rated dc Voltage, V
R
= 10 V)
50
150
2000
4000
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
0.1 0.3 0.4 0.60.2 0.5
10
0.1
1
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
0.1 0.3 0.4 0.60.2 0.5
100
0.1
1
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (V)
I
F
, MAXIMUM INSTANTANEOUS
FORWARD CURRENT (A)
Figure 3. Typical Reverse Current
261004 8
1.0E−02
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance
V
F
@ 125°C
100°C
75°C
−40°C
25°C
V
F
@ 125°C
100°C
25°C
1.0E−03
I
R
@ 125°C
100°C
75°C
25°C
26
10
04 8
1000
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
10,000
25°C
f = 1 MHz
0.7
100
0.7
10
75°C
1.0E−04
1.0E−05
1.0E−06
1.0E−07
MBRS410ET3
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
Figure 5. Current Derating, Junction−to−Lead
100 110 130120
0
5
I
F
, AVERAGE FORWARD
CURRENT (A)
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
134602 5
3.5
0
1.5
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
P
FO
, AVERAGE POWER DISSIPATION (W)
Figure 7. Thermal Response, Junction−to−Ambient (min pad)
1
2
3
4
9
6
7
8
SQUARE WAVE
dc
RATED VOLTAGE
APPLIED
R
q
JL
= 12 °C/W
T
J
= 125°C
798
0.5
1
2.5
2
3
T
J
= 125°C
SQUARE WAVE
dc
t, TIME (S)
0.0001 0.001 0.10.00001 0.01 1 10 100 1000
R
(t)
, TRANSIENT THERMAL RESISTANCE (°C/W)
0.1
1
10
100
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.01
140 160150
Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad)
t, TIME (S)
0.0001 0.001 0.10.00001 0.01 1 10 100 1000
R
(t)
, TRANSIENT THERMAL RESISTANCE (°C/W)
0.1
1
10
100
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.01
P1-P3P4-P4

MBRS410ET3G

Mfr. #:
Buy MBRS410ET3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 4A 10V
Lifecycle:
New from this manufacturer.
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