DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 53
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Drain Bias Voltage
(Vdd1, Vdd2, Vdd3, Vdd4)
+5.5 Vdc
Gate Bias Voltage (Vgg) -3 to 0 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc) +10 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 11.93 mW/°C above 85 °C)
1.07 W
Thermal Resistance
(channel to die bottom)
83.8 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
4.5 175
5.0 180
5.5 182
Note: Ampli er will operate over full voltage ranges shown above
Typical Supply Current vs. Vdd
Gain, Power & Output IP3
vs. Gate Voltage @ 12.5 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC634
v01.0308
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 20 GHz
15
20
25
30
35
90
120
150
180
210
-0.85 -0.83 -0.8 -0.78 -0.75 -0.73 -0.7
Gain
P1dB
Psat
IP3
Idd
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Idd (mA)
Vgg (V)
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