MC100E143FNR2G

MC10E143, MC100E143
www.onsemi.com
4
Table 5. 10E SERIES NECL DC CHARACTERISTICS (V
CCx
= 0.0 V; V
EE
= 5.0 V (Note 1))
Symbol
Characteristic
0°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
EE
Power Supply Current 120 145 120 145 120 145 mA
V
OH
Output HIGH Voltage (Note 2) 1020 930 840 980 895 810 910 815 720 mV
V
OL
Output LOW Voltage (Note 2) 1950 1790 1630 1950 1790 1630 1950 1773 1595 mV
V
IH
Input HIGH Voltage 1170 1005 840 1130 970 810 1060 890 720 mV
V
IL
Input LOW Voltage 1950 1715 1480 1950 1715 1480 1950 1698 1445 mV
I
IH
Input HIGH Current 150 150 150
mA
I
IL
Input LOW Current 0.5 0.3 0.5 0.065 0.3 0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary 0.46 V / +0.06 V.
2. Outputs are terminated through a 50 W resistor to V
CC
2.0 V.
Table 6. 100E SERIES PECL DC CHARACTERISTICS (V
CCx
= 5.0 V; V
EE
= 0.0 V (Note 1))
Symbol
Characteristic
0°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
EE
Power Supply Current 120 145 120 145 138 165 mA
V
OH
Output HIGH Voltage (Note 2) 3975 4050 4120 3975 4050 4120 3975 4050 4120 mV
V
OL
Output LOW Voltage (Note 2) 3190 3295 3380 3190 3255 3380 3190 3260 3380 mV
V
IH
Input HIGH Voltage 3835 3975 4120 3835 3975 4120 3835 3975 4120 mV
V
IL
Input LOW Voltage 3190 3355 3525 3190 3355 3525 3190 3355 3525 mV
I
IH
Input HIGH Current 150 150 150
mA
I
IL
Input LOW Current 0.5 0.3 0.5 0.25 0.5 0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary 0.46 V / +0.8 V.
2. Outputs are terminated through a 50 W resistor to V
CC
2.0 V.
Table 7. 100E SERIES NECL DC CHARACTERISTICS (V
CCx
= 0.0 V; V
EE
= 5.0 V (Note 1))
Symbol
Characteristic
0°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
EE
Power Supply Current 120 145 120 145 138 165 mA
V
OH
Output HIGH Voltage (Note 2) 1025 950 880 1025 950 880 1025 950 880 mV
V
OL
Output LOW Voltage (Note 2) 1810 1705 1620 1810 1745 1620 1810 1740 1620 mV
V
IH
Input HIGH Voltage 1165 1025 880 1165 1025 880 1165 1025 880 mV
V
IL
Input LOW Voltage 1810 1645 1475 1810 1645 1475 1810 1645 1475 mV
I
IH
Input HIGH Current 150 150 150
mA
I
IL
Input LOW Current 0.5 0.3 0.5 0.25 0.5 0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary 0.46 V / +0.8 V.
2. Outputs are terminated through a 50 W resistor to V
CC
2.0 V.
MC10E143, MC100E143
www.onsemi.com
5
Table 8. AC CHARACTERISTICS (V
CCx
= 5.0 V; V
EE
= 0.0 V or V
CCx
= 0.0 V; V
EE
= 5.0 V (Note 1))
Symbol Characteristic
0°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
f
SHIFT
Max. Shift Frequency 700 900 700 900 700 900 MHz
t
PLH
t
PHL
Propagation Delay To Output
Clk
MR
600
600
800
800
1000
1000
600
600
800
800
1000
1000
600
600
800
800
1000
1000
ps
t
s
Setup Time
D
SEL
50
300
100
150
50
300
100
150
50
300
100
150
ps
t
h
Hold Time
D
SEL
300
75
100
150
300
75
100
150
300
75
100
150
ps
t
RR
Reset Recovery Time 900 700 900 700 900 700 ps
t
PW
Minimum Pulse Width
Clk, MR
400 400 400 ps
t
SKEW
Within-Device Skew (Note 2) 75 75 75 ps
t
JITTER
Random Clock Jitter (RMS) < 1 < 1 < 1 ps
T
r
t
f
Rise/Fall Times
(20 - 80%)
300 525 800 300 525 800 300 525 800 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. 10 Series: V
EE
can vary 0.46 V / +0.06 V.
100 Series: V
EE
can vary 0.46 V / +0.8 V.
2. Within-device skew is defined as identical transitions on similar paths through a device.
Figure 3. Typical Termination for Output Driver and Device Evaluation
(See Application Note AND8020/D
Termination of ECL Logic Devices.)
Driver
Device
Receiver
Device
QD
Q D
Z
o
= 50 W
Z
o
= 50 W
50 W 50 W
V
TT
V
TT
= V
CC
2.0 V
Resource Reference of Application Notes
AN1405/D ECL Clock Distribution Techniques
AN1406/D Designing with PECL (ECL at +5.0 V)
AN1503/D
ECLinPSt I/O SPiCE Modeling Kit
AN1504/D Metastability and the ECLinPS Family
AN1568/D Interfacing Between LVDS and ECL
AN1672/D The ECL Translator Guide
AND8001/D Odd Number Counters Design
AND8002/D Marking and Date Codes
AND8020/D Termination of ECL Logic Devices
AND8066/D Interfacing with ECLinPS
AND8090/D AC Characteristics of ECL Devices
MC10E143, MC100E143
www.onsemi.com
6
PACKAGE DIMENSIONS
28 LEAD PLLC
CASE 77602
ISSUE F
N
M
L
V
W
D
D
Y BRK
28 1
VIEW S
S
L-M
S
0.010 (0.250) N
S
T
S
L-M
M
0.007 (0.180) N
S
T
0.004 (0.100)
G1
G
J
C
Z
R
E
A
SEATING
PLANE
S
L-M
M
0.007 (0.180) N
S
T
T
B
S
L-M
S
0.010 (0.250) N
S
T
S
L-M
M
0.007 (0.180) N
S
T
U
S
L-M
M
0.007 (0.180) N
S
T
Z
G1X
VIEW DD
S
L-M
M
0.007 (0.180) N
S
T
K1
VIEW S
H
K
F
S
L-M
M
0.007 (0.180) N
S
T
NOTES:
1. DATUMS -L-, -M-, AND -N- DETERMINED
WHERE TOP OF LEAD SHOULDER EXITS
PLASTIC BODY AT MOLD PARTING LINE.
2. DIMENSION G1, TRUE POSITION TO BE
MEASURED AT DATUM -T-, SEATING PLANE.
3. DIMENSIONS R AND U DO NOT INCLUDE
MOLD FLASH. ALLOWABLE MOLD FLASH IS
0.010 (0.250) PER SIDE.
4. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
5. CONTROLLING DIMENSION: INCH.
6. THE PACKAGE TOP MAY BE SMALLER THAN
THE PACKAGE BOTTOM BY UP TO 0.012
(0.300). DIMENSIONS R AND U ARE
DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUDING ANY MISMATCH
BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
7. DIMENSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H
DIMENSION TO BE GREATER THAN 0.037
(0.940). THE DAMBAR INTRUSION(S) SHALL
NOT CAUSE THE H DIMENSION TO BE
SMALLER THAN 0.025 (0.635).
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.485 0.495 12.32 12.57
B 0.485 0.495 12.32 12.57
C 0.165 0.180 4.20 4.57
E 0.090 0.110 2.29 2.79
F 0.013 0.021 0.33 0.53
G 0.050 BSC 1.27 BSC
H 0.026 0.032 0.66 0.81
J 0.020 --- 0.51 ---
K 0.025 --- 0.64 ---
R 0.450 0.456 11.43 11.58
U 0.450 0.456 11.43 11.58
V 0.042 0.048 1.07 1.21
W 0.042 0.048 1.07 1.21
X 0.042 0.056 1.07 1.42
Y --- 0.020 --- 0.50
Z 2 10 2 10
G1 0.410 0.430 10.42 10.92
K1 0.040 --- 1.02 ---
__ __

MC100E143FNR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Registers BBG ECL 9BIT
Lifecycle:
New from this manufacturer.
Delivery:
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