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BAS21,215

P1-P3P4-P6P7-P9P10-P11
2003 Mar 20 3
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BAS19 − 120 V
BAS20 − 200 V
BAS21 − 250 V
V
R
continuous reverse voltage
BAS19 − 100 V
BAS20 − 150 V
BAS21 − 200 V
I
F
continuous forward current see Fig.2; note 1 − 200 mA
I
FRM
repetitive peak forward current − 625 mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25 °C prior to
surge; see
Fig.4
t = 1 µs − 9 A
t = 100 µs − 3 A
t = 10 ms − 1.7 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
2003 Mar 20 4
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 100 mA 1 V
I
F
= 200 mA 1.25 V
I
R
reverse current see Fig.5
BAS19 V
R
= 100 V 100 nA
V
R
= 100 V; T
j
= 150 °C 100 µA
BAS20 V
R
= 150 V 100 nA
V
R
= 150 V; T
j
= 150 °C 100 µA
BAS21 V
R
= 200 V 100 nA
V
R
= 200 V; T
j
= 150 °C 100 µA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 5 pF
t
rr
reverse recovery time when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100 Ω; measured at
I
R
= 3 mA; see Fig.8
50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 330 K/W
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
2003 Mar 20 5
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBG442
T
amb
(
o
C)
I
F
(mA)
(1) T
j
= 150 °C; typical values.
(2) T
j
= 25 °C; typical values.
(3) T
j
= 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
600
I
F
(mA)
0
200
400
MBG384
1
V
F
(V)
(1) (3)(2)
handbook, full pagewidth
MBG703
10
t
p
(µs)
1
I
FSM
(A)
10
2
10
−1
10
4
10
2
10
3
10
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25 °C prior to surge.
P1-P3P4-P6P7-P9P10-P11

BAS21,215

Mfr. #:
Buy BAS21,215
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching SW 200V 200MA HS
Lifecycle:
New from this manufacturer.
Delivery:
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