MSD52
MSD52-Rev 1 www.microsemi.com
Dec, 2009 1/3
Module Type
TYPE VRRM VRSM
MSD52 – 08
MSD52 – 12
MSD52 – 16
MSD52 – 18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
ID
Tc=110℃
50 A
IFSM
t=10mS Tv
=45℃
460 A
i
2
t
t=10mS Tv
=45℃
1050
A
2
s
Visol
a.c.50Hz;r.m.s.;1min 3000 V
Tvj
-40 to 150
℃
Tstg
-40 to 125
℃
Mt To terminals(M5) 5±15% Nm
Ms To heatsink(M5) 5±15% Nm
Weight Module 135 g
Thermal Characteristics
Symbol Conditions Values Units
Rth(j-c)
Per diode 1.45
℃
W
Rth(c-s)
Module 0.07
℃
W
Electrical Characteristics
Circuit
Glass Passivated Three
Phase Rectifier Bridge
V
RRM 800 to 1800V
ID 50 Amp
Features
y Three phase bridge rectifier
y Blocking voltage: 800 to 1800V
y Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
y Glass passivated chip
Applications
y Three phase rectifiers for power supplies
y Rectifiers for DC motor field supplies
y Battery charger rectifiers
y In
ut rectifiers for variable fre
uenc
drives
-
+
~
~
~
MSD
Symbol Conditions Values Units
VFM
T=25℃ IFM =150A
1.8 V
IRD
Tvj =25℃ VRD=VRRM
T
vj =150℃ VRD=VRRM
≤0.3
≤5
mA
mA
