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PSMN3R4-30PL,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PSMN3R4-30PL
All information pr
ovided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 201
0. All rights rese
rved.
Product data sheet
Rev
. 01 — 2 November 2010
9 of 15
NXP Semiconductors
PSMN3R4-30PL
N-channel 30 V 3.4 m
Ω
logic level MOSFET
Fig 11.
Gate-source th
reshold voltag
e as a function o
f
junction temperature
Fig 12.
Normalized drain-source
on-state resistance
factor as a function of junction temperature
Fig 13.
Drain-source on-state
resistance as a function
of drain current; typical values
Fig 14.
Gate charge waveform definitions
0
0
3
a
a
c982
0
1
2
3
-
60
0
60
120
180
T
j
(
°
C)
V
GS
(t
h)
(V)
max
typ
mi
n
03aa27
0
0.
5
1
1.
5
2
−
60
0
60
120
180
T
j
(
°
C)
a
003aad414
0
3
6
9
12
0
2
04
0
6
08
0
1
0
0
I
D
(A)
R
DS
on
(m
Ω
)
3
3.
5
V
GS
(V) =
2
.8
10
4.
5
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
PSMN3R4-30PL
All information pr
ovided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 201
0. All rights rese
rved.
Product data sheet
Rev
. 01 — 2 November 2010
10 of 15
NXP Semiconductors
PSMN3R4-30PL
N-channel 30 V 3.4 m
Ω
logic level MOSFET
Fig 15.
Gate-source voltage as a function
of gate
charge; typical values
Fig
16.
Input, output and
reverse transfer c
apacitances
as a function of
drain-source v
oltage; typical
values
Fig 17.
Source (diode f
orward) current as a fun
ction of
source-drain (diode forward) voltage; typical values
003aad417
0
2
4
6
8
10
02
0
4
0
6
0
8
0
Q
G
(n
C)
V
GS
(V)
V
DS
= 15
V
24 V
6 V
003aad418
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(p
F
)
C
iss
C
rs
s
C
os
s
003aad416
0
20
40
60
80
100
0
0
.3
0
.6
0
.9
1.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
T
j
= 175
°
C
PSMN3R4-30PL
All information pr
ovided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 201
0. All rights rese
rved.
Product data sheet
Rev
. 01 — 2 November 2010
1
1 of 15
NXP Semiconductors
PSMN3R4-30PL
N-channel 30 V 3.4 m
Ω
logic level MOSFET
7.
Package outline
Fig 18.
Package outline
SOT78 (TO-220AB)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT78
SC-46
3-lead TO-220AB
SOT7
8
08-04-23
08-06-13
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT
A
mm
4.7
4.1
1.40
1.25
0.9
0.6
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
A
1
DIMENSIONS (mm are the original dimensions)
P
lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
0
5
10 mm
scale
b
b
1
(2)
1.6
1.0
c
D
1.3
1.0
b
2
(2)
D
1
E
e
2.54
L
L
1
(1)
L
2
(1)
max.
3.0
p
q
3.0
2.7
Q
2.6
2.2
D
D
1
q
p
L
12
3
L
1
(1)
b
1
(2)
(3
×
)
b
2
(2)
(2
×
)
e
e
b(3
×
)
A
E
A
1
c
Q
L
2
(1)
mounting
base
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PSMN3R4-30PL,127
Mfr. #:
Buy PSMN3R4-30PL,127
Manufacturer:
Nexperia
Description:
MOSFET N-CHAN 30V 100A
Lifecycle:
New from this manufacturer.
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