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VN340SP

P1-P3P4-P6P7-P9
August 2000 1/9
®
1
VN340SP
QUAD HIGH SIDE SMART
POWER SOLID STATE RELAY
OUTPUT CURRENT : 0.7A PER CHANNEL
DIGITAL I/O’s CLAMPED AT 32V MINIMUM
VOLTAGE
SHORTED LOAD AND OVERTEMPERATURE
PROTECTIONS
PROTECTION AGAINST LOSS OF GROUND
BUILT-IN CURRENT LIMITER
UNDERVOLTAGE SHUT-DOWN
OPEN DRAIN DIAGNOSTIC OUTPUT
FAST DEMAGNETIZATION OF INDUCTIVE
LOADS
CONFORMS TO IEC 1131-2
DESCRIPTION
The VN340SP is a monolithic device made using
STMicroelectronics VIPower technology, intended
for driving four indipendent resistive or inductive
loads with one side connected to ground. Active
current limitation avoids dropping the system
power supply in case of shorted load. Built-in
thermal shut-down protects the chip from
overtemperature and short circuit. The open drain
diagnostic output indicates overtemperature
conditions. Each I/O is pulled down when
overtemperature condition of the relative channel
is verified.
TYPE V
demag
(*) R
DSon
(*) I
out
(*) V
cc
VN340SP Vcc-55V 0.2Ω 0.7A 36 V
1
BLOCK DIAGRAM
(*) Per channel
PowerSO-10
TM
1
10
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
2/9
VN340SP
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
CC
Power supply voltage 45 V
-V
CC
Reverse supply voltage -4 V
I
OUT
Output current (continuous) Internally limited A
I
R
Reverse output current (per channel) -6 A
I
IN
Input current (per channel) ± 10 mA
I
DIAG
Diag pin current ±10 mA
V
ESD
Electrostatic discharge (R=1.5KΩ; C=100pF) 2000 V
E
AS
Single pulse avalanche energy per channel not simultaneously
(see figure 1)
400 mJ
P
tot
Power dissipation at T
c
=25°C Internally limited W
T
j
Junction operating temperature Internally limited °C
T
stg
Storage temperature -55 to 150 °C
1
CURRENT AND VOLTAGE CONVENTIONS
CONNECTION DIAGRAM TOP VIEW
Obsolete Product(s) - Obsolete Product(s)
3/9
VN340SP
THERMAL DATA
(*) see test configuration and application description
SWITCHING (V
CC
=24V)
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case (1) (MAX) 3 °C/W
R
thj-amb
Thermal resistance junction-ambient ($) (MAX) 50 °C/W
Symbol Parameter Test Conditions Min Typ Max Unit
V
CC
Supply voltage 10 36 V
R
ON
On state resistance
I
OUT
=0.5A; T
j
=25°C
I
OUT
=0.5A; -25°C<T
j
<85°C
I
OUT
=0.5A; T
j
=125°C
0.2
0.32
0.4
Ω
Ω
Ω
I
S
Supply current
All channels off
On state; V
IN
=30V; I
OUTn
=0V
(T
j
=125°C)
1
6
mA
mA
V
OL
Low state output voltage V
IN
=V
IL
; R
LOAD
>10MΩ 1.5 V
V
demag
Output voltage at turn-off I
OUT
=0.5A; L
LOAD
=1mH V
CC
-65 V
CC
-55 V
CC
-45 V
I
LGND
Output current at turn-off
V
CC
=V
INn
=V
GND
=V
STAT
=18 to 30V
T
amb
=-25°C to 85°C (*)
2mA
Symbol Parameter Test Conditions Min Typ Max Unit
t
d(on)
Turn-on delay time of
Output current
I
OUT
=0.5A, Resistive Load
Input rise time <0.1µs, T
j
=25°C
52 100 µs
t
r
Rise time of
Output current
I
OUT
=0.5A, Resistive Load
Input rise time <0.1µs, T
j
=25°C
94 250 µs
t
d(off)
Turn-off delay time of
Output current
I
OUT
=0.5A, Resistive Load
Input rise time <0.1µs, T
j
=25°C
34 50 µs
t
f
Fall time of
Output current
I
OUT
=0.5A, Resistive Load
Input rise time <0.1µs, T
j
=25°C
820µs
POWER
ELECTRICAL CHARACTERISTICS (10V<V
CC
<36V;-25°C<T
j
<85°C; unless otherwise specified)
1
(1) Per channel
($) When mounted using minimum recommended pad size on FR-4 board
P1-P3P4-P6P7-P9

VN340SP

Mfr. #:
Buy VN340SP
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Quad High Side
Lifecycle:
New from this manufacturer.
Delivery:
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