OMO ElectronicOMO Electronic
Expand menu
0 Cart

START499D

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
June 2010 Doc ID 14496 Rev 4 1/18
18
START499D
NPN RF silicon transistor
Features
■ High efficiency
■ Common emitter configuration
■ Broadband performances P
OUT
= 29 dBm with
14 dB gain @ 900 MHz
■ Plastic package
■ Linear and non linear operation
■ Supplied in tape and reel
■ In compliance with the 2002/95/EC european
directive
Description
The START499D provide the market with a Si
state-of-art RF process. Manufactured with ST 3
rd
generation bipolar process, it offers the highest
power, gain and efficiency in SOT-89 for given
breakdown voltage (BVCEo). START499D is
suitable for a wide range of application up to 1
GHz.
Figure 1. Pin connection
SOT-89
Emitter
Base
Emitter
Collector
Table 1. Device summary
Order code Marking Package Packaging
START499D D499 SOT-89 Tape and reel
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Contents START499D
2/18 Doc ID 14496 Rev 4
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit, part list and photo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.1 Thermal pad and via design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.2 Soldering profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Obsolete Product(s) - Obsolete Product(s)
START499D Electrical data
Doc ID 14496 Rev 4 3/18
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (T
CASE
= +25 °C)
Symbol Parameter Value Unit
V
CEO
Collector - emitter voltage 4.5 V
V
EBO
Emitter - base voltage 1.5 V
I
C
Collectorcurrent 1.0 A
P
DISS
Power dissipation 1.7 W
T
J
Max. operating junction temperature 150 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 75 °C/W
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

START499D

Mfr. #:
Buy START499D
Manufacturer:
STMicroelectronics
Description:
RF Bipolar Transistors NPN RF TRANSISTOR 29dBm 14dBgain 900mz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet