HMC-AUH312 Data Sheet
Rev. E | Page 4 of 17
Table 4. Recommended Operating Conditions Without Bias Tee
Parameter Symbol Min Typ Max Unit
POSITIVE SUPPLY
Voltage 5 8 8.25 V
Current 60 65 mA
GATE VOLTAGE
Gate Voltage 1 V
GG
1 1 +0.5 V
Gate Voltage 2 V
GG
2 1 1.8 V
POWER DISSIPATION
V
DD
= 6 V 360 mW
V
DD
= 8 V 480 mW
RF INPUT POWER 4 dBm
OPERATING TEMPERATURE −55 +25 +85 °C
Data Sheet HMC-AUH312
Rev. E | Page 5 of 17
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter Rating
Drain Bias Voltage with Bias Tee (V
DD
) 7 V dc
Drain Bias Voltage Without Bias Tee (V
DD
) 8.25 V dc
Gain Bias Voltage (V
GG
1) 0.5 V
Gain Bias Voltage (V
GG
2) 2 V
RF Input Power 10 dBm
Channel Temperature 180°C
Storage Temperature Range −40°C to +85°C
Operating Temperature Range
55°C to +85°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
HMC-AUH312 Data Sheet
Rev. E | Page 6 of 17
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Fig
ure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 RFIN/V
GG
1 RF Input/Gate Bias for Alternate Circuit for the Input Stage. This is a multifunction pin where the V
GG
1 function is
used in the alternate circuit only for biasing (see Figure 23 and Figure 25 for the alternate applications circuit and
alternate assembly drawings, respectively). This pin is dc-coupled and requires a dc block. See Figure 3 for the
interface schematic.
2, 4 V
GG
1, V
GG
2
Gate Control for Ampl
ifier. For more information about assembly and required assembly components, see Figure 24
Se
e Figure 4 for the interface schematic.
3 RFOUT/V
DD
RF Output/DC Bias for Alternate Application Circuit for the Output Stage. This is a multifunction pin where the V
DD
function is used in the alternate application circuit only for biasing (see Figure 23 and Figure 25 for the alternate
applications circuit and alternate assembly diagram, respectively). This pin is dc-coupled and requires a dc block.
See Figure 5 for the interface schematic.
5 V
DD
Supply Voltage for Application Circuit. See Figure 22 and Figure 24 for the external components. See Figure 6 for
the interface schematic.
GND Die Bottom (Ground). The die bottom must be connected to RF/dc ground. See Figure 7 for the interface schematic.
TOP VIEW
(Not to Scale)
HMC-AUH312
V
GG
1
V
GG
2V
DD
RFIN/V
GG
1
RFOUT/V
DD
1
3
4
5
2
NOTES
1. DIE BOTTOM MUST BE CONNECTED TO RF/DC GROUND.
13476-002

HMC-AUH312-SX

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier GaAs HEMT WBand Diver amp DC-65 GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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