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SI5468DC-T1-GE3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 69072
S09-0316-Rev. A, 02-Mar-09
Vishay Siliconix
Si5468DC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Forward Diode Voltage vs. Temperature
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-Source Voltage
Single Pulse Power
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.00
0.02
0.04
0.06
0.08
02468 10
T
J
= 25 °C
T
J
= 125 °C
I
D
=6.8 A
0
30
50
10
20
Power (W)
Time (s)
40
1 100 6001010
-1
10
-2
10
-3
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
BVDSS Limited
1ms
10 ms
100 ms
1s
10 s
100 s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Document Number: 69072
S09-0316-Rev. A, 02-Mar-09
www.vishay.com
5
Vishay Siliconix
Si5468DC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
3
6
9
12
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating
0
1
2
3
4
5
6
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 69072
S09-0316-Rev. A, 02-Mar-09
Vishay Siliconix
Si5468DC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69072
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9P10-P11

SI5468DC-T1-GE3

Mfr. #:
Buy SI5468DC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
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