SiHP5N50D
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Vishay Siliconix
S16-0109-Rev. B, 25-Jan-16
4
Document Number: 91489
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
V
SD
, Source-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
0.01
0.1
1
10
100
1 10 100 1000
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Operation in this area
limited by R
DS(on)
BVDSS Limited
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
Limited by R
T
J
, Case Temperature (°C)
I
D
, Drain Current (A)
25 50 75 100 125 150
1
2
3
4
5
6
0
T
J
, Junction Temperature (°C)
V
DS
, Drain-to-Source
- 60 0 160
Breakdown Voltage (V)
- 40 - 20 20 40 60 80 100 120 140
475
500
525
550
575
600
625
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Pulse Time (s)
Duty Cycle = 0.5
0.1
0.05
Single Pulse
0.2
0.02
