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FJP13007

P1-P3P4-P5
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Publication Order Number:
FJP13007/D
© 2005 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
FJP13007
High Voltage Fast-Switching NPN Power Transistor
Features
• High Voltage High Speed Power Switch Application
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
FJP13007TU J13007 TO-220 3L (Dual Gauge) Rail
FJP13007H1TU J13007-1 TO-220 3L (Single Gauge) Rail
FJP13007H1TU-F080
J13007-1 TO-220 3L (Dual Gauge) Rail
FJP13007H2TU J13007-2 TO-220 3L (Dual Gauge) Rail
FJP13007H2TU-F080
J13007-2 TO-220 3L (Dual Gauge) Rail
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 700 V
V
CEO
Collector-Emitter Voltage 400 V
V
EBO
Emitter-Base Voltage 9 V
I
C
Collector Current (DC) 8 A
I
CP
Collector Current (Pulse) 16 A
I
B
Base Current (DC) 4 A
P
C
Collector Dissipation (T
C
= 25°C) 80 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
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2
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Note:
1.
Pul
se test: pw ≤ 300 μs, duty cycle ≤ 2%.
h
FE
Classification
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10 mA, I
B
= 0 400 V
I
EBO
Emitter Cut-Off Current V
EB
= 9 V, I
C
= 0 1 mA
h
FE
1 DC Current Gain
(1)
V
CE
= 5 V, I
C
= 2 A 8 60
h
FE
2 DC Current Gain
(1)
V
CE
= 5 V, I
C
= 5 A 5 30
V
CE
(sat) Collector-Emitter Saturation Voltage
I
C
= 2 A, I
B
= 0.4 A 1.0
V I
C
= 5 A, I
B
= 1 A 2.0
I
C
= 8 A, I
B
= 2 A 3.0
V
BE
(sat) Collector-Base Saturation Voltage
I
C
= 2 A, I
B
= 0.4 A 1.2
V
I
C
= 5 A, I
B
= 1 A 1.6
f
T
Current Gain Bandwidth Product V
CE
= 10 V, I
C
= 0.5 A 4 MHz
C
ob
Output Capacitance V
CB
= 10 V, f = 0.1 MHz 110 pF
t
ON
Turn-On Time
V
CC
= 125 V, I
C
= 5 A,
I
B1
= -I
B2
= 1 A,
R
L
= 25 Ω
1.6 μs
t
STG
Storage Time 3.0 μs
t
F
Fall Time 0.7 μs
Classification H1 H2
h
FE
1 15 ~ 28 26 ~ 39
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
Figure 2. Saturation Voltage
Figure 3. Collector Output Capacitance
Figure 4. Turn-On Time
Figure 5. Turn-Off Time
Figure 6. Forward Biased Safe Operating Area
0.1 1 10
1
10
100
V
CE
= 5V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
I
C
= 3 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100 1000
1
10
100
1000
C
ob
[pF], OUTPUT CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1 1 10
10
100
1000
V
CC
=125V
I
C
=5I
B
t
D
, V
BE
(off)=5V
t
R
t
R
, t
D
[ns], TURN ON TIME
I
C
[A], COLLECTOR CURRENT
0.1 1 10
10
100
1000
10000
V
CC
=125V
I
C
=5I
B
t
F
t
STG
t
STG
, t
F
[ns], TURN OFF TIME
I
C
[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
10μs
100μs
1ms
DC
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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P1-P3P4-P5

FJP13007

Mfr. #:
Buy FJP13007
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN/8A/400V TO-220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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