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S40BR

P1-P2
V
RRM
= 100 V - 1600 V
I
F
=40 A
Features
• High Surge Capability DO-5 Package
• Types up to 1600 V V
RRM
Parameter Symbol S40B (R) S40D (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
100 200 V
S40B thru S40JR
S40J (R)
400
S40G (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
600
pp g
RMS reverse voltage
V
RMS
70 140 V
DC blocking voltage
V
DC
100 200 V
Continuous forward current
I
F
40 40 A
Operating temperature
T
j
-65 to 190 -65 to 190 °C
Storage temperature
T
stg
-65 to 190 -65 to 190 °C
Parameter Symbol S40B (R) S40D (R) Unit
Diode forward voltage 1.1 1.1
10 10 μA
15 15 mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.25 1.25 °C/W
15
A595
Reverse current
I
R
V
F
595
V
R
= 100 V, T
j
= 25 °C
I
F
= 40 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
280
595 595
-65 to 190
40 40
-65 to 190
S40J (R)
10 10
S40G (R)
1.25
V
R
= 100 V, T
j
= 190 °C
1.25
1.1 1.1
9
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-65 to 190 -65 to 190
T
C
= 25 °C, t
p
= 8.3 ms
420
600400
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
www.genesicsemi.com
1
S40B thru S40JR
www.genesicsemi.com
2
P1-P2

S40BR

Mfr. #:
Buy S40BR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 100V 40A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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