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STTH30R04DY

P1-P3P4-P6P7-P9P10-P10
This is information on a product in full production.
September 2013 DocID024454 Rev 1 1/10
10
STTH30R04-Y
Automotive ultrafast recovery diode
Datasheet - production data
Features
• Ultrafast switching
• Low reverse current
• Low thermal resistance
• Reduces switching and conduction losses
• High junction temperature
• AEC-Q101 qualified
• ECOPACK
®
2 compliant component
Description
The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.
Table 1. Device summary
Symbol Value
I
F(AV)
30 A
V
RRM
400 V
T
j (max)
175° C
V
F (typ)
1.0 V
t
rr (typ)
24 ns
K
A
K
A
K
A
TO-220AC
STTH30R04DY
DO-247
STTH30R04WY
www.st.com
Characteristics STTH30R04-Y
2/10 DocID024454 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.95 x I
F(AV)
+ 0.01 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(RMS)
RMS forward current 50 A
I
F(AV)
Average forward current, δ = 0.5 TO-220AC / DO-247 T
c
= 135° C 30 A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms Sinusoidal 280 A
T
stg
Storage temperature range -65 to +175 ° C
T
j
Operating junction temperature range -40 to +175 ° C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case TO-220AC / DO-247 0.8 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
15
µAT
j
= 100° C 3 30
T
j
= 125° C 15 150
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 15 A
1.35
V
T
j
= 150° C 0.83 1.04
T
j
= 25° C
I
F
= 30 A
1.55
T
j
= 100° C 1.32
T
j
= 150° C 1.0 1.25
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
DocID024454 Rev 1 3/10
STTH30R04-Y Characteristics
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min Typ Max Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T
j
= 25° C
24 35
ns
I
F
= 1 A, dI
F
/dt = -15 A/µs,
V
R
= 30 V, T
j
= 25° C
73 100
I
F
= 1 A, I
R
= 1 A,
I
RR
= 0.25 A, T
j
= 25° C
45
I
RM
Reverse recovery current
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125° C
10 14 A
t
fr
Forward recovery time
I
F
= 30 A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
500 ns
V
FP
Forward recovery voltage
I
F
= 30 A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
2.9 V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus forward
current
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40
P
F(AV)
(W)
T
d
=tp/T
tp
I
F(AV)
(A)
d = 0.05
d = 0.1
d = 0.2
d = 0.5
d = 1
I
FM
(A)
0.1
1.0
10.0
100.0
1000.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
FM
(V)
T
J
=25°CT
J
=25°C
(Maximum values)
T
J
=150°C
(Typical values)
T
J
=150°C
(Typical values)
T
J
=150°C
(Maximum values)
T
J
=150°C
(Maximum values)
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current versus
dI
F
/dt (typical values)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Zth
(j-c)
/Rth
(j-c)
Single pulse
TO-220AC
DO-247
tp(s)
0
2
4
6
8
10
12
14
16
18
20
22
10 100 1000
I
RM
(A)
I
F
= 30 A
V
R
=320 V
T
j
=125° C
T
j
=25° C
dI
F
/dt(A/µs)
P1-P3P4-P6P7-P9P10-P10

STTH30R04DY

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
Rectifiers Auto ultrafast Recovry Hi VTG diode
Lifecycle:
New from this manufacturer.
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