STPS20170C
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Table 3: Absolute Ratings (limiting values, per diode)
Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics (per diode)
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x I
F(AV)
+ 0.011 I
F
2
(RMS)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 170 V
I
F(RMS)
RMS forward voltage 30 A
I
F(AV)
Average forward current
δ = 0.5
TO-220AB /
D
2
PAK / I
2
PAK
T
c
= 155°C
Per diode
Per device
10
20
A
TO-220FPAB
T
c
= 135°C
Per diode
Per device
10
20
I
FSM
Surge non repetitive forward current
t
p
= 10ms sinusoidal
180 A
P
ARM
Repetitive peak avalanche power
t
p
= 1µs T
j
= 25°C
6700 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
* : thermal runaway condition for a diode on its own heatsink
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB / D
2
PAK / I
2
PAK
Per diode
Total
2.2
1.3
°C/W
TO-220FPAB
Per diode
Total
4.5
3.5
R
th(c)
TO-220AB / D
2
PAK / I
2
PAK
Coupling
0.3
TO-220FPAB 2.5
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
*
Reverse leakage current
T
j
= 25°C
V
R
= V
RRM
15 µA
T
j
= 125°C
15 mA
V
F
**
Forward voltage drop
T
j
= 25°C
I
F
= 10A
0.90
V
T
j
= 125°C
0.69 0.75
T
j
= 25°C
I
F
= 20A
0.99
T
j
= 125°C
0.79 0.86
Ptot
dTj
--------------
1
Rth j a–()
--------------------------
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