LXA16T600C
Qspeed
™
Family
600 V, 16 A X-Series Common-Cathode Diode
www.powerint.com January 2011
Product Summary
I
F(AVG)
per diode 8 A
V
RRM
600 V
Q
RR
(Typ at 125 °C) 82 nC
I
RRM
(Typ at 125 °C) 3.5 A
Softness t
b
/t
a
(Typ at 125 °C) 0.55
TO-220AB
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
General Description
This device has the lowest Q
RR
of any 600V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• Power Factor Correction (PFC) Boost Diode
• Motor drive circuits
• DC-AC inverters
Features
• Low Q
RR
, Low I
RRM
, Low t
RR
• High dI
F
/dt capable (1000A/µs)
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol Parameter Conditions Rating Units
V
RRM
Peak repetitive reverse voltage 600 V
Per Diode, T
J
= 150 °C, T
C
= 122°C 8 A
I
F(AVG)
Average forward current
Per Device, T
J
= 150 °C, T
C
= 122°C 16 A
I
FSM
Non-repetitive peak surge current 60 Hz, ½ cycle 60 A
I
FSM
Non-repetitive peak surge current ½ cycle of t = 28 µs Sinusoid, T
C
= 25 °C 350 A
T
J
Maximum junction temperature 150 °C
T
STG
Storage temperature –55 to 150 °C
Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 °C
P
D
Power dissipation T
C
= 25 °C 83 W
Thermal Resistance
Symbol Resistance from: Conditions Rating Units
R
θ
JA
Junction to ambient TO-220AB 62 °C/W
Per Diode 1.5 °C/W
R
θ
JC
Junction to case
Per Device 0.8 °C/W
Pin Assignment
A1
K
A2
A1
K
A2