HT2X_SDS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.1 — 3 November 2014
210431 5 of 9
NXP Semiconductors
HT2x
HITAG 2 transponder IC
8. Limiting values
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
9. Abbreviations
Table 5. Memory map in Password Mode
Page Content Access
0 serial number ro
1 password RWD r/w or 0
2 reserved for future use r/w or 0
3 configuration (8 bit)
password tag (24 bit)
r/w or ro
4 usable memory page r/w or ro
5 usable memory page r/w or ro
6 usable memory page r/w or ro
7 usable memory page r/w or ro
Table 6. Limiting values - HT2ICS2002W/V6F/R
[1]
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage 0.5 +6.5 V
V
ESD
electrostatic discharge voltage MIL-STD 883D, Method
3015.7, Human Body
2- kV
I
lu
latch-up current MIL-STD 883D, Method 3023 100 - mA
I
i(max)
maximum input current IN1-IN2 - 30 mA
T
j
junction temperature 55 +140 C
Table 7. Limiting values - HT2DC20S20/F/R (SOT385-1)/ HT2MOA4S20/E/3/R (SOT500-2)
[1]
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature 55 +125 C
Table 8. Abbreviations
Acronym Description
EEPROM Electrically Erasable Programmable Read-Only Memory
IC Integrated Circuit
RF Radio Frequency
RWD Read Write Device
