BDC01DRL1G Datasheet BDC01DRL1G | P1-P3

February, 2006 − Rev. 2

1 Publication Order Number:

BDC01D/D

BDC01D

One Watt Amplifier

Transistor

NPN Silicon

Features

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

100 Vdc

Collector−Base Voltage V

CBO

100 Vdc

Emitter−Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

0.5 Adc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

1.0

8.0

W

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

2.5

20

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

125 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

50 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−92 (TO−226)

CASE 29−10

STYLE 1

MARKING DIAGRAM

3

1

2

Device Package Shipping

ORDERING INFORMATION

BDC01DRL1 TO−92 2000 / Tape & Reel

http://onsemi.com

BDC

01D

AYWWG

G

BDC01DRL1G TO−92

(Pb−Free)

5000 / Tape & Reel

BDC01D = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

COLLECTOR

2

3

BASE

1

EMITTER

BDC01D

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Voltage

(I

C

= 10 mA, I

B

= 0)

V

(BR)CEO

100 − Vdc

Collector Cutoff Current

(V

CB

= 100 V, I

E

= 0)

I

CBO

− 0.1

mAdc

Emitter Cutoff Current

(I

C

= 0, V

EB

= 5.0 V)

I

EBO

− 100 nAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 100 mA, V

CE

= 1.0 V)

(I

C

= 500 mA, V

CE

= 2.0 V)

h

FE

40

25

400

−

Collector−Emitter Saturation Voltage (Note 1)

(I

C

= 1000 mA, I

B

= 100 mA)

V

CE(sat)

− 0.7 Vdc

Collector−Emitter On Voltage (Note 1)

(I

C

= 1000 mA, V

CE

= 1.0 V)

V

BE(on)

− 1.2 Vdc

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

(I

C

= 200 mA, V

CE

= 5.0 V, f = 20 MHz)

f

T

50 − MHz

Output Capacitance

(V

CB

= 10 V, I

E

= 0, f = 1.0 MHz)

C

ob

− 30 pF

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%.

Figure 1. DC Current Gain

I

C

, COLLECTOR CURRENT (mA)

400

0.5 0.7 1.0 2.0 3.0 5.0 7.0

10 20 30 50 70 100 200

200

100

80

60

40

h

FE

, DC CURRENT GAIN

T

J

= 125°C

25°C

−55°C

V

CE

= 1.0 V

300 500

BDC01D

http://onsemi.com

3

I

B

, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLT

S

1.0

0.8

0.6

0.4

0.2

0

0.1 101.0

T

J

= 25°C

I

C

= 10 mA

0.05 0.2 0.5 2.0 5.0 20

100 mA 250 mA

50

mA

50

500 mA

I

C

, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

V, VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0

0.5 1.0 20020

T

J

= 25°C

V

BE(on)

@ V

CE

= 1.0 V

V

CE(sat)

@ I

C

/I

B

= 10

5.0 10 50 100

V

BE(sat)

@ I

C

/I

B

= 10

2.0 500

I

C

, COLLECTOR CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

−0.8

−2.8

1.0 10010

q

VB

for V

BE

0.5 2.0 5.0 20 50 200

−1.2

−1.6

−2.0

−2.4

VB

, TEMPERATURE COEFFICIENT (mV/ C)°θ

500

C, CAPACITANCE (pF)

Figure 5. Capacitance

V

R

, REVERSE VOLTAGE (VOLTS)

1005020105.02.01.00.50.20.1

80

60

40

20

10

4.0

T

J

= 25°C

C

obo

C

ibo

8.0

6.0

Figure 6. Current−Gain — Bandwidth Product

I

C

, COLLECTOR CURRENT (mA)

20070503020107.05.03.02.0

300

200

100

70

50

30

V

CE

= 2.0 V

T

J

= 25°C

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

T

100

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

2 k

1.0

I

C

, COLLECTOR CURRENT (mA)

MPSW05

2.0 5.0

Figure 7. Active Region — Safe Operating Area

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

500

200

100

50

20

10

10 20 60 80 100

MPSW06

100 ms

1.0 ms

1.0 s

T

C

= 25°C

T

A

= 25°C

dcdc

1 k

DUTY CYCLE ≤ 10%

BDC01DRL1G

BDC01DRL1G

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