APT60M75L2LLG Datasheet APT60M75L2LLG | P1-P3

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

Drain-Source On-State Resistance

2

(V

GS

= 10V, I

D

= 36.5A)

Zero Gate Voltage Drain Current (V

DS

= 600V, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 480V, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 5mA)

050-7097 Rev B 9-2004

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

µA

nA

Volts

MIN TYP MAX

600

0.075

100

500

±100

35

APT60M75L2LL

600

73

292

±30

±40

893

7.14

-55 to 150

300

73

50

3200

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

G

D

S

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg • Popular TO-264

MAX Package

TO-264

Max

APT60M75L2LL

600V 73A 0.075

ΩΩ

Ω

Power MOS 7

®

is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

®

by significantly lowering R

DS(ON)

and Q

g

. Power MOS 7

®

combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

POWER MOS 7

R

MOSFET

DYNAMIC CHARACTERISTICS

050-7097 Rev B 9-2004

APT60M75L2LL

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

θJC

+ T

C

t

1

t

2

P

DM

SINGLE PULSE

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0

0.5

0.1

0.3

0.7

0.9

0.05

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -73A)

Reverse Recovery Time (I

S

= -73A, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -73A, dl

S

/dt = 100A/µs)

Peak Diode Recovery

dv

/

dt

5

UNIT

Amps

Volts

ns

µC

V/ns

MIN TYP MAX

73

292

1.3

857

26

8

Symbol

R

θJC

R

θJA

MIN TYP MAX

0.14

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv

/

dt

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy

6

Turn-off Switching Energy

Turn-on Switching Energy

6

Turn-off Switching Energy

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 300V

I

D

= 73A @ 25°C

RESISTIVE SWITCHING

V

GS

= 15V

V

DD

= 300V

I

D

= 73A @ 25°C

R

G

= 0.6Ω

INDUCTIVE SWITCHING @ 25°C

V

DD

= 400V, V

GS

= 15V

I

D

= 73A, R

G

= 5Ω

INDUCTIVE SWITCHING @ 125°C

V

DD

= 400V V

GS

= 15V

I

D

= 73A, R

G

= 5Ω

MIN TYP MAX

8930

1130

50

195

48

100

23

19

55

8

1515

1745

2345

1950

UNIT

pF

nC

ns

µJ

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T

j

=

+25°C, L = 1.20mH, R

G

=

25Ω, Peak I

L

= 73A

5

dv

/

dt

numbers reflect the limitations of the test circuit rather than the

device itself. I

S

≤ -I

D

73A

di

/

dt

≤ 700A/µs V

R

≤ 600V T

J

≤ 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

050-7097 Rev B 9-2004

APT60M75L2LL

Typical Performance Curves

200

180

160

140

120

100

80

60

40

20

0

1.40

1.30

1.20

1.10

1.00

0.90

0.80

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

8V

5.5V

6V

6.5

V

GS

=15 &10V

7V

7.5V

V

GS

=10V

V

GS

=20V

T

J

= +125°C

T

J

= +25°C

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R

DS(ON)

vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, R

DS(ON)

vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

V

DS

> I

D

(ON) x R

DS(ON)

MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS(TH)

, THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

0 5 10 15 20 25 30

0 1 2 3 4 5 6 7 8 9 0 20 40 60 80 100 120 140

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

NORMALIZED TO

V

GS

= 10V @ I

D

= 36.5A

I

D

= 36.5A

V

GS

= 10V

180

160

140

120

100

80

60

40

20

0

80

70

60

50

40

30

20

10

0

2.5

2.0

1.5

1.0

0.5

0.0

T

J

= -50°C

0.0484

0.0903

0.0236F

0.400F

Power

(watts)

RC MODEL

Junction

temp. (°C)

Case temperature. (°C)

APT60M75L2LLG

APT60M75L2LLG

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