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DSILC6-4P6

P1-P3P4-P6P7-P9P10-P11
May 2007 Rev 3 1/11
11
DSILC6-4xx
ESD Protection for high speed interface
Main applications
Where transient over-voltage protection in ESD
sensitive equipment is required, such as:
■ Computers
■ Printers
■ Communication systems
■ Cell phone handsets and accessories
■ Video equipment
Description
The DSILC6-4xx is a monolithic application
specific discrete dedicated to ESD protection of
high speed interfaces, such as USB 2.0, Ethernet,
display and camera serial interfaces (LVDS).
The device is ideal for applications where both
reduced printed circuit board space and power
absorption capability are required.
Features
Diode array topology
■ 4 line protection
■ 5 V V
CC
protection
■ Very low capacitance: 1 pF typ.
■ Lead-free pacakge
■ RoHS compliant
Benefits
■ Very low capacitance between lines to GND for
optimized data integrity
■ Low PCB space consumption: 2.9 mm² max for
SOT-666 and 1.5 mm² max for Flip-Chip
■ Cut-off frequency > 2 GHz
■ High reliability offered by monolithic integration
■ MDDI, SMIA, MIPI specification compliant
Functional diagram
Order Code
Complies with the following standards:
Part Number Marking
DSILC6-4P6 G
DSILC6-4F2 EI
IEC 61000-4-2 level 4:
8 kV (contact discharge)
15 kV (air discharge)
MIL STD 883G-Method 3015-7: class 3B
I/O2
I/O3
I/O4
I/O1
VCC
GND
Flip-Chip
DSILC6-4F2
SOT-666
DSILC6-4P6
I/O3
I/O4
VCC
GND
I/O2
I/O1
I/O4
I/O3
GND
VCC
I/O1
I/O2
I/O1
I/O4
GND
VCC
I/O2
I/O3
Flip-Chip
Top-side view
Flip-Chip
Top-side view
SOT-666
Top-side view
www.st.com
Characteristics DSILC6-4xx
2/11
1 Characteristics
Table 1. Absolute ratings
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
8
15
kV
I
PP
Peak pulse current
I/O to GND
Pulse waveform = 8/20 µs
SOT-666 5
A
Flip-Chip 7
P
PP
Peak pulse power
SOT-666 90
W
Flip-Chip 120
T
stg
Storage temperature range -55 to +150 °C
T
j
Maximum junction temperature 125 °C
T
L
Lead solder temperature (10 seconds duration) 260 °C
Table 2. Electrical characteristics (T
amb
= 25° C)
Symbol Parameter
V
RM
Reverse stand-off voltage
I
RM
Leakage current
V
BR
Breakdown voltage
V
F
Forward voltage
V
CL
Clamping voltage
I
PP
Peak pulse current
Symbol Parameter Test Conditions
Value
Unit
Min Typ Max
I
RM
Leakage current V
RM
= 5 V 0.5 µA
V
BR
Breakdown voltage
between V
BUS
and GND
I
R
= 1 mA 6 V
V
F
Forward voltage I
F
= 10 mA 1 V
C
i/o-GND
Capacitance between
I/O and GND
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV
SOT-666 2 2.5
pF
Flip-Chip 2.5 3
V
I/O
= 1.65 V, V
CC
= 4.3 V,
F = 1 MHz, V
OSC
= 400 mV
SOT-666 1.5 1.8
Flip-Chip 1.8 2.0
C
i/o-i/o
Capacitance
between I/O
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV
SOT-666 1.0 1.25
Flip-Chip 1.25 1.5
V
I/O
= 1.65 V, V
CC
= 4.3 V,
F = 1 MHz, V
OSC
= 400 mV
SOT-666 0.75 0.9
Flip-Chip 0.9 1.20
ΔC
i/o-GND
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV 0.06
ΔC
i/o-i/o
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV 0.05
DSILC6-4xx Characteristics
3/11
Figure 1. Relative variation of leakage
current versus junction
temperature - SOT-666 (typical
values)
Figure 2. Relative variation of leakage
current versus junction
temperature Flip-Chip (typical
values)
Figure 3. Remaining voltage after
DSILC6-4P6 during ESD
15 kV positive surge (air discharge)
Figure 4. Remaining voltage after
DSILC6-4F2 during ESD
15 kV positive surge (air discharge)
Figure 5. Remaining voltage after
DSILC6-4P6 during ESD
15 kV negative surge (air discharge)
Figure 6. Remaining voltage after
DSILC6-4F2 during ESD
15 kV negative surge (air discharge)
1
10
100
25 50 75 100 125
T (°C)
j
V = 5V
R
I[T
RM j
] / I [T
RM j
=25°C]
1
10
100
25 50 75 100 125
T (°C)
j
V= 5V
R
I[T
RM j
] / I [T
RM j
=25°C]
50 ns/div
10 V/div
10 V/div
50 ns/div
50 ns/div
5 V/div
5 V/div
50 ns/div
P1-P3P4-P6P7-P9P10-P11

DSILC6-4P6

Mfr. #:
Buy DSILC6-4P6
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors ESD Protection
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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