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IXFP30N25X3

P1-P3P4-P6
© 2018 IXYS CORPORATION, All Rights Reserved
DS100848D(6/18)
X3-Class HiPERFET
TM
Power MOSFET
N-Channel Enhancement Mode
IXFY30N25X3
IXFA30N25X3
IXFP30N25X3
V
DSS
= 250V
I
D25
= 30A
R
DS(on)
60m
Features
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250µA 250 V
V
GS(th)
V
DS
= V
GS
, I
D
= 500µA 2.5 4.5 V
I
GSS
V
GS
= 20V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 5 A
T
J
= 125C 250 A
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 48 60 m
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 250 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 250 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C30A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
45 A
I
A
T
C
= 25C15A
E
AS
T
C
= 25C 300 mJ
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150°C 20 V/ns
P
D
T
C
= 25C 170 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
F
C
Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
M
d
Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
G = Gate D = Drain
S = Source Tab = Drain
TO-252 (IXFY)
G
S
TO-263 (IXFA)
G
D (Tab)
S
D (Tab)
TO-220 (IXFP)
D (Tab)
S
G
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY30N25X3 IXFA30N25X3
IXFP30N25X3
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 30 A
I
SM
Repetitive, pulse Width Limited by T
JM
120 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
82 ns
Q
RM
290 nC
I
RM
7 A
I
F
= 15A, -di/dt = 100A/µs
V
R
= 100V
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 14 23 S
R
Gi
Gate Input Resistance 1.8
C
iss
1450 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 266 pF
C
rss
1 pF
C
o(er)
115 pF
C
o(tr)
410 pF
t
d(on)
16 ns
t
r
24 ns
t
d(off)
77 ns
t
f
20 ns
Q
g(on)
21 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
6 nC
Q
gd
6 nC
R
thJC
0.73 C/W
R
thCS
TO-220 0.50 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 30 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
© 2018 IXYS CORPORATION, All Rights Reserved
IXFY30N25X3 IXFA30N25X3
IXFP30N25X3
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
4V
Fig. 4. R
DS(on)
Normalized to I
D
= 15A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 30A
I
D
= 15V
Fig. 5. R
DS(on)
Normalized to I
D
= 15A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 10203040506070
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
5V
7V
6V
8V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
V
GS(th)
BV
DSS
P1-P3P4-P6

IXFP30N25X3

Mfr. #:
Buy IXFP30N25X3
Manufacturer:
Littelfuse
Description:
MOSFET DISCMSFT NCHULTRJNCTX3CLASS
Lifecycle:
New from this manufacturer.
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