ADM3251E Data Sheet
CHARGE PUMP VOLTAGE CONVERTER
The charge pump voltage converter consists of a 200 kHz
oscillator and a switching matrix. The converter generates a
±10.0 V supply from the input 5.0 V level. This is done in two
stages by using a switched capacitor technique as illustrated in
Figure 16 and Figure 17. First, the 5.0 V input supply is doubled
to 10.0 V by using C1 as the charge storage element. The +10.0 V
level is then inverted to generate −10.0 V using C2 as the
storage element. C3 is shown connected between V+ and V
ISO
,
but is equally effective if connected between V+ and GND
ISO
.
Capacitor C3 and Capacitor C4 are used to reduce the output
ripple. Their values are not critical and can be increased, if
desired. Larger capacitors (up to 10 μF) can be used in place of
C1, C2, C3, and C4.
5.0 V LOGIC TO EIA/TIA-232E TRANSMITTER
The transmitter driver converts the 5.0 V logic input levels into
RS-232 output levels. When driving an RS-232 load with V
CC
=
5.0 V, the output voltage swing is typically ±10 V.
GND
C3C1
S1
S2
S3
S4
V+ = 2V
ISO
+ +
INTERNAL
OSCILLATOR
V
ISO
V
ISO
07388-016
Figure 16. Charge Pump Voltage Doubler
GND
ISO
C4C2
S1
S2
S3
S4
GND
ISO
+ +
INTERNAL
OSCILLATOR
V+
V– = –(V+)
FROM
VOLTAGE
DOUBLER
07388-017
Figure 17. Charge Pump Voltage Inverter
EIA/TIA-232E TO 5 V LOGIC RECEIVER
The receiver is an inverting level-shifter that accepts the RS-232
input level and translates it into a 5.0 V logic output level. The
input has an internal 5 kΩ pull-down resistor to ground and is
also protected against overvoltages of up to ±30 V. An uncon-
nected input is pulled to 0 V by the internal 5 kΩ pull-down
resistor. This, therefore, results in a Logic 1 output level for an
unconnected input or for an input connected to GND. The
receiver has a Schmitt-trigger input with a hysteresis level of
0.1 V. This ensures error-free reception for both a noisy input
and for an input with slow transition times.
HIGH BAUD RATE
The ADM3251E offers high slew rates, permitting data trans-
mission at rates well in excess of the EIA/TIA-232E specifications.
The RS-232 voltage levels are maintained at data rates up to
460 kbps.
THERMAL ANALYSIS
Each ADM3251E device consists of three internal die, attached
to a split-paddle lead frame. For the purposes of thermal analysis,
it is treated as a thermal unit with the highest junction temper-
ature reflected in the θ
JA
value from Table 7. The value of θ
JA
is
based on measurements taken with the part mounted on a
JEDEC standard 4-layer PCB with fine-width traces in still air.
Following the recommendations in the PCB Layout section
decreases the thermal resistance to the PCB, allowing increased
thermal margin at high ambient temperatures.
INSULATION LIFETIME
All insulation structures eventually break down when subjected
to voltage stress over a sufficiently long period. The rate of
insulation degradation is dependent on the characteristics of the
voltage waveform applied across the insulation. In addition to
the testing performed by the regulatory agencies, Analog
Devices carries out an extensive set of evaluations to determine
the lifetime of the insulation structure within the ADM3251E.
The insulation lifetime of the ADM3251E depends on the
voltage waveform type imposed across the isolation barrier. The
iCoupler insulation structure degrades at different rates
depending on whether the waveform is bipolar ac, unipolar ac,
or dc. Figure 18, Figure 19, and Figure 20 illustrate these
different isolation voltage waveforms.
Bipolar ac voltage is the most stringent environment. In the case
of unipolar ac or dc voltage, the stress on the insulation is
significantly lower.
0V
RATED PEAK VOLTAGE
07388-019
Figure 18. Bipolar AC Waveform
0V
RATED PEAK VOLTAGE
07388-020
Figure 19. Unipolar AC Waveform
0V
RATED PEAK VOLTAGE
07388-021
Figure 20. DC Waveform Outline Dimensions
Rev. G | Page 12 of 16
Data Sheet ADM3251E
APPLICATIONS INFORMATION
PCB LAYOUT
The ADM3251E requires no external circuitry for its logic
interfaces. Power supply bypassing is required at the input and
output supply pins (see Figure 21). Bypass capacitors are
conveniently connected between Pin 3 and Pin 4 for V
CC
and
between Pin 19 and Pin 20 for V
ISO
. The capacitor value should
be between 0.01 μF and 0.1 μF. The total lead length between
both ends of the capacitor and the input power supply pin
should not exceed 20 mm.
Because it is not possible to apply a heat sink to an isolation
device, the device primarily depends on heat dissipating into
the PCB through the ground pins. If the device is used at high
ambient temperatures, care should be taken to provide a
thermal path from the ground pins to the PCB ground plane.
The board layout in Figure 21 shows enlarged pads for Pin 4,
Pin5, Pin 6, Pin 7, Pin 10, and Pin 11. Multiple vias should be
implemented from each of the pads to the ground plane, which
significantly reduce the temperatures inside the chip. The
dimensions of the expanded pads are left to the discretion of the
designer and the available board space.
NC
V
CC
V
CC
GND
V
ISO
V+
C1+
C1–
GND
T
OUT
GND
R
IN
GND
C2+
R
OUT
C2–
T
IN
V–
GND
GND
ISO
07388-018
ADM3251E
VIA TO GND
ISO
0.1µF
C3
C1
C2
0.1µF
NC = NO CONNECT
C4
Figure 21. Recommended Printed Circuit Board Layout
In applications involving high common-mode transients,
care should be taken to ensure that board coupling across the
isolation barrier is minimized. Furthermore, the board layout
should be designed such that any coupling that does occur
equally affects all pins on a given component side.
The power supply section of the ADM3251E uses a 300 MHz
oscillator frequency to pass power through its chip-scale trans-
formers. Operation at these high frequencies may raise concerns
about radiated emissions and conducted noise. PCB layout and
construction is a very important tool for controlling radiated
emissions. Refer to Application Note AN-0971, Control of
Radiated Emissions with isoPower Devices, for extensive guidance
on radiation mechanisms and board layout considerations.
EXAMPLE PCB FOR REDUCED EMI
The choice of how aggressively EMI must be addressed for a
design to pass emissions levels depends on the requirements of
the design as well as cost and performance trade-offs.
The starting point for this example is a 2-layer PCB. EMI reduc-
tions are relative to the emissions and noise from this board. To
conform to FCC Class B levels, the emissions at these two
frequencies must be less than 46 dBμV/m, normalized to 3 m
antenna distance. As expected, EMI testing confirmed that the
largest emissions peaks occur at the tank frequency and rectifier
frequency.
A 6-layer PCB that employs edge guarding and buried capacitive
bypassing, which are EMI mitigation techniques described in
detail in Application Note AN-0971, was manufactured. The
stackup of the 6-layer test PCB is shown in Table 9. PCB layout
Gerber files are available upon request.
Table 9. PCB Layers
Layer Description
Top Components and ground planes
Inner Layer 1 V
CC
planes
Inner Layer 2 All tracks
Inner Layer 3 Blank
Inner Layer 4 Buried capacitive plane
Bottom Ground planes
EMI testing was repeated on the optimized board. The resulting
reduction in radiated emissions is shown in Table 10. This
board meets FCC Class B standards with no external shielding
by utilizing buried stitching capacitors and edge fencing.
Table 10. EMI Test Results
EMI Test Results 300 MHz 600 MHz
2-Layer PCB Emissions 48 dB 53 dB
6-Layer PCB Emissions 36 dB 32 dB
Achieved EMI Reduction 12 dB 21 dB
DC CORRECTNESS AND MAGNETIC FIELD
IMMUNITY
Positive and negative logic transitions at the isolator input cause
narrow (~1 ns) pulses to be sent to the decoder via the trans-
former. The decoder is bistable and is, therefore, either set or
reset by the pulses, indicating input logic transitions.
In the absence of logic transitions at the input for more than
1 μs, periodic sets of refresh pulses (indicative of the correct
input state) are sent to ensure dc correctness at the output. If the
decoder receives no internal pulses for more than approximately
5 μs, the input side is assumed to be unpowered or nonfunctional,
in which case the isolator output is forced to a default state by
the watchdog timer circuit. This situation should occur in the
ADM3251E during power-up and power-down operations only.
Rev. G | Page 13 of 16
ADM3251E Data Sheet
The limitation on the ADM3251E magnetic field immunity is
set by the condition in which induced voltage in the receiving
coil of the transformer is sufficiently large to falsely set or reset
the decoder. The following analysis defines the conditions
under which this can occur.
The pulses at the transformer output have an amplitude of >1.0 V.
The decoder has a sensing threshold of about 0.5 V, thus estab-
lishing a 0.5 V margin in which induced voltages can be tolerated.
The voltage induced across the receiving coil is given by
V = (−dβ/dt)Σπr
n
2
; n = 1, 2, … , N
where:
β is the magnetic flux density (gauss).
N is the number of turns in the receiving coil.
r
n
is the radius of the n
th
turn in the receiving coil (cm).
Given the geometry of the receiving coil internally and an
imposed requirement that the induced voltage be, at most, 50%
of the 0.5 V margin at the decoder, a maximum allowable
magnetic field is calculated, as shown in Figure 22.
MAGNETIC FIELD FREQUENCY (Hz)
100
MAXIMUM ALLOWABLE MAGNETIC FLUX
DENSITY (kgauss)
0.001
1M
10
0.01
1k
10k 10M
0.1
1
100M100k
07388-200
Figure 22. Maximum Allowable External Magnetic Flux Density
For example, at a magnetic field frequency of 1 MHz, the
maximum allowable magnetic field of 0.2 kgauss induces a
voltage of 0.25 V at the receiving coil. This is approximately
50% of the sensing threshold and does not cause a faulty output
transition. Similarly, if such an event occurs during a transmitted
pulse (and is of the worst-case polarity), the received pulse is
reduced from >1.0 V to 0.75 V, which is still well above the
0.5 V sensing threshold of the decoder.
The preceding magnetic flux density values correspond to
specific current magnitudes at given distances from the trans-
formers. Figure 23 expresses these allowable current
magnitudes as a function of frequency for selected distances. As
shown in Figure 23, the ADM3251E is extremely immune and
can be affected only by extremely large currents operated at
high frequency very close to the component. For example, at a
magnetic field frequency of 1 MHz, a 0.5 kA current placed
5 mm away from the ADM3251E is required to affect the
operation of the component.
MAGNETIC FIELD FREQUENCY (Hz)
MAXIMUM ALLOWABLE CURRENT (kA)
1k
100
10
1
0.1
0.01
1k 10k 100M100k 1M 10M
DISTANCE = 5mm
DISTANCE = 1m
DISTANCE = 100mm
07388-201
Figure 23. Maximum Allowable Current for Various Current-to-ADM3251E
Spacings
In the presence of strong magnetic fields and high frequencies,
any loops formed by PCB traces may induce error voltages
sufficiently large to trigger the thresholds of succeeding
circuitry. Exercise care in the layout of such traces to avoid this
possibility.
ISOLATED POWER SUPPLY CIRCUIT
To operate the ADM3251E with its internal dc-to-dc converter
disabled, connect a voltage of between 3.0 V and 3.7 V to the
V
CC
pin and apply an isolated power of between 3.0 V and 5.5 V
to the V
ISO
pin, referenced to GND
ISO
.
A transformer driver circuit with a center-tapped transformer
and LDO can be used to generate the isolated supply, as shown
in Figure 24. The center-tapped transformer provides electrical
isolation of the 5 V power supply. The primary winding of the
transformer is excited with a pair of square waveforms that are
180° out of phase with each other. A pair of Schottky diodes and
a smoothing capacitor are used to create a rectified signal from
the secondary winding. The ADP3330 linear voltage regulator
provides a regulated power supply to the bus side circuitry
(V
ISO
) of the ADM3251E.
ADP3330
IN
NR
+
+
SD103C
22µF 10µF
5V
OUT
SD103C
78253
V
CC
V
CC
V
CC
GND
ISOLATION
BARRIER
SD
ERR
TRANSFORMER
DRIVER
V
CC
GND
V
ISO
GND
ISO
ADM3251E
07388-022
Figure 24. Isolated Power Supply Circuit
Rev. G | Page 14 of 16

ADM3251EARWZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Digital Isolators Iso SGL CH Line Dvr/Rcvr
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