IPD40N03S4L08ATMA1

P1-P3 P4-P6 P7-P9

IPD40N03S4L-08

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

1)

40 A

T

C

=100°C, V

GS

=10V

2)

38

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

160

Avalanche energy, single pulse

2)

E

AS

I

D

=40A

23 mJ

Avalanche current, single pulse

I

AS

-

40 A

Gate source voltage

V

GS

- ±16 V

Power dissipation

P

tot

T

C

=25°C

42 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

-

Value

V

DS

30

V

R

DS(on),max

8.3

mW

I

D

40 A

Product Summary

PG-TO252-3-11

Type Package Marking

IPD40N03S4L-08 PG-TO252-3-11 4N03L08

Rev. 1.1 page 1 2010-10-05

IPD40N03S4L-08

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 3.6 K/W

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

30 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=13µA

1.0 1.5 2.2

Zero gate voltage drain current

I

DSS

V

DS

=30V, V

GS

=0V,

T

j

=25°C

- 0.1 1 µA

V

DS

=30V, V

GS

=0V,

T

j

=125°C

2)

- 10 100

Gate-source leakage current

I

GSS

V

GS

=16V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5V, I

D

=20A

- 9.7 13.0

mW

V

GS

=10V, I

D

=40A

- 7.2 8.3

Values

Rev. 1.1 page 2 2010-10-05

IPD40N03S4L-08

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

2)

Input capacitance

C

iss

- 1170 1520 pF

Output capacitance

C

oss

- 320 420

Reverse transfer capacitance

C

rss

- 11 22

Turn-on delay time

t

d(on)

- 3 - ns

Rise time

t

r

- 1 -

Turn-off delay time

t

d(off)

- 12 -

Fall time

t

f

- 5 -

Gate Charge Characteristics

2)

Gate to source charge

Q

gs

- 4 5 nC

Gate to drain charge

Q

gd

- 2 4

Gate charge total

Q

g

- 15 20

Gate plateau voltage

V

plateau

- 3.4 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 30 A

Diode pulse current

2)

I

S,pulse

- - 120

Diode forward voltage

V

SD

V

GS

=0V, I

F

=40A,

T

j

=25°C

0.6 0.95 1.3 V

Reverse recovery time

2)

t

rr

V

R

=30V, I

F

=I

S

,

di

F

/dt =100A/µs

- 12 - ns

Reverse recovery charge

2)

Q

rr

- 10 - nC

T

C

=25°C

Values

V

GS

=0V, V

DS

=15V,

f =1MHz

V

DD

=15V, V

GS

=10V,

I

D

=40A, R

G

=1.6W

V

DD

=24V, I

D

=40A,

V

GS

=0 to 10V

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 3.6K/W the chip is able to carry 54A at 25°C.

Rev. 1.1 page 3 2010-10-05

P1-P3 P4-P6 P7-P9

IPD40N03S4L08ATMA1

Mfr. #:

Buy IPD40N03S4L08ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH TO252-3

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

IPD40N03S4L08ATMA1