VS-113CNQ100APBF

VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
Revision: 23-May-14
1
Document Number: 94125
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier New Generation 3
D-61 Package, 2 x 55 A
FEATURES
175 °C T
J
operation
Center tap module
Low forward voltage drop
High frequency operation
High power discrete
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mold low profile, small footprint, high
current package
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
DESCRIPTION
The center tap Schottky rectifier module series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package D-61-8, D-61-8-SM, D-61-8-SL
I
F(AV)
2 x 55 A
V
R
100 V
V
F
at I
F
0.81 V
I
RM
max. 32 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
15 mJ
Base
common
cathode
Base
common
cathode
Common
cathode
Anode
2
Anode
1
123
Common
cathode
Anode
2
Anode
1
123
Anode
2
Anode
1
13
D-61-8
VS-113CNQ100APbF
VS-113CNQ100ASMPbF
D-61-8-SM
VS-113CNQ100ASLPbF
D-61-8-SL
Available
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 110 A
V
RRM
100 V
I
FSM
t
p
= 5 μs sine 7000 A
V
F
55 A
pk
, T
J
= 125 °C (per leg) 0.66 V
T
J
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-113CNQ100APbF UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
Revision: 23-May-14
2
Document Number: 94125
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 150 °C, rectangular waveform
55
A
per device 110
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
7000
A
10 ms sine or 6 ms rect. pulse 720
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 30 mH 15 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
55 A
T
J
= 25 °C
0.81
V
110 A 1.00
55 A
T
J
= 125 °C
0.66
110 A 0.79
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1.0
mA
T
J
= 125 °C 32
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 1960 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 5.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
0.5
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 0.25
Typical thermal resistance,
case to heatsink (D-61-8 only)
R
thCS
Mounting surface, smooth and greased
Device flatness < 5 mils
0.30
Approximate weight
7.8 g
0.28 oz.
Mounting torque
(D-61-8 only)
minimum
Recommended hardware 3M stainless screw
12 (10)
kgf · cm
(lbf · in)
maximum 24 (20)
Marking device
Case style D-61-8 113CNQ100A
Case style D-61-8-SM 113CNQ100ASM
Case style D-61-8-SL 113CNQ100ASL
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
Revision: 23-May-14
3
Document Number: 94125
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
100
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0 1.0 1.5 2.50.5
1000
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
2.0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.001
0.01
0.1
0
40 60
80 100
10
1000
20
100
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1
10 000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
1000
40
80 10020 60
T
J
= 25 °C
100
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01
0.1
110
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

VS-113CNQ100APBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 844-113CNQ100A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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