HMC-ALH102-SX

LOW NOISE AMPLIFIERS - CHIP
1
1 - 114
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
v02.0209
General Description
Features
Functional Diagram
Noise Figure: 2.5 dB
Gain: 11.6 dB @ 10 GHz
P1dB Output Power: +10 dBm
Supply Voltage: +2V @ 55 mA
Die Size: 3.0 x 1.435 x 0.1 mm
Electrical Speci cations, T
A
= +25° C, Vdd= 2V
[1]
, Idd = 55mA
[2]
Typical Applications
This HMC-ALH102 is ideal for:
• Wideband Communications Receivers
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC-ALH102 is a GaAs MMIC HEMT Low Noise
Distributed Ampli er die which operates between
2 and 20 GHz. The ampli er provides 11.6 dB of gain
at 10 GHz, 2.5 dB noise  gure and +10 dBm of out-
put power at 1 dB gain compression while requiring
only 55 mA from a +2V supply voltage. The HMC-
ALH102 ampli er is ideal for integration into Multi-
Chip-Modules (MCMs) due to its small size.
HMC-ALH102
Parameter Min. Typ. Max. Units
Frequency Range 2 - 20 GHz
Gain 8 10 dB
Input Return Loss 15 dB
Output Return Loss 12 dB
Output Power for 1 dB Compression 8 10 dBm
Noise Figure 2.5 dB
Supply Current (Idd) 55 mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 115
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
HMC-ALH102
v02.0209
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2.0 V, Id = 55 mA
0
4
8
12
16
2 6 10 14 18 22
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
2 6 10 14 18 22
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
2 6 10 14 18 22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
2 6 10 14 18 22
NOISE FIGURE (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 116
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH102
v02.0209
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage +3.7 Vdc
Gate Bias Voltage -1 to +0.3 Vdc
RF Input Power 5 dBm
Channel Temperature 180 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE
±
.002”
Die Packaging Information
[1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC-ALH102-SX

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier GaAs HEMT WBand lo Noise amp 2 - 20 GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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