ZXMC3AM832TA

SUMMARY
N-Channel V
(BR)DSS
= 30V; R
DS(ON)
= 0.12 ;I
D
= 3.7A
P-Channel V
(BR)DSS
= -30V; R
DS(ON)
= 0.21 ;I
D
= -2.7A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
FEATURES
Low on - resistance
Fast switching speed
Low threshold
Low gate drive
3mm x 2mm MLP
APPLICATIONS
MOSFET gate drive
LCD backlight inverters
Motor control
DEVICE MARKING
C01
ZXMC3AM832
PROVISIONAL ISSUE E - JULY 2004
1
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH
QUANTITY
PER REEL
ZXMC3AM832TA 7
’‘ 8mm 3000 units
ZXMC3AM832TC 13’‘ 8mm 10000 units
ORDERING INFORMATION
3mm x 2mm Dual Die MLP
1
23
4
5
678
D2
D1
D1
D2
G2
G1
S1
S2
3 x 2 Dual MLP
underside view
PINOUT
Not Recommended for New Design
Please Use ZXMC3AMCTA
ZXMC3AM832
PROVISIONAL ISSUE E - JULY 2004
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
(a)(f)
R
θJA
83.3 °C/W
Junction to Ambient
(b)(f)
R
θJA
51 °C/W
Junction to Ambient
(c)(f)
R
θJA
125 °C/W
Junction to Ambient
(d)(f)
R
θJA
111 °C/W
Junction to Ambient
(d)(g)
R
θJA
73.5 °C/W
Junction to Ambient
(e)(g)
R
θJA
41.7 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PARAMETER SYMBOL N-Channel P-Channel UNIT
Drain-Source Voltage V
DSS
30 -30 V
Gate-Source Voltage V
GS
20 20 V
Continuous Drain Current@V
GS
=10V; T
A
=25C
(b)(f)
@V
GS
=10V; T
A
=25C
(b)(f)
@V
GS
=10V; T
A
=25C
(a)(f)
I
D
3.7
3.0
2.9
-2.7
-2.2
-2.1
A
A
Pulsed Drain Current I
DM
12.4 -9.2 A
Continuous Source Current (Body Diode)
(b)(f)
I
S
2.4 -2.8 A
Pulsed Source Current (Body Diode) I
SM
12.4 -9.2 A
Power Dissipation at TA=25°C
(a)(f)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Power Dissipation at TA=25°C
(b)(f)
Linear Derating Factor
P
D
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C
(c)(f)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C
(d)(f)
Linear Derating Factor
P
D
1.13
8
W
mW/°C
Power Dissipation at TA=25°C
(d)(g)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
ABSOLUTE MAXIMUM RATINGS
Not Recommended for New Design
Please Use ZXMC3AMCTA
ZXMC3AM832
PROVISIONAL ISSUE E - JULY 2004
3
110
10m
100m
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
0.1 1 10 100
0
25
50
75
100
125
150
175
200
225
0.1 1 10 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
110
10m
100m
1
10
Note (a)(f)
100us
100ms
1s
R
DS( ON)
Limited
1ms
N-channel Safe Operating Area
Single Pulse, T
amb
=25°C
DC
10ms
I
D
DrainCurrent (A)
V
DS
Drain-Source Voltage (V)
1oz Cu
Note (d)(f)
1oz Cu
Note (d)(g)
2oz Cu
Note (a)(f)
2oz Cu
Note (e)(g)
Derating Curve
Max Power Dissipation (W)
Temperature (°C)
Note (a)(f)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
1oz copper
Note (g)
1oz copper
Note (f)
2oz copper
Note (f)
2oz copper
Note (g)
Thermal Resistance v Board Area
Thermal Resistance (°C/W)
BoardCuArea(sqcm)
1oz copper
Note (g)
2oz copper
Note (g)
1oz copper
Note (f)
2oz copper
Note (f)
Power Dissipation v Board Area
T
amb
=25°C
T
jmax
=150°C
Continuous
P
D
Dissipation (W)
BoardCuArea(sqcm)
DC
1s
100ms
10ms
Note (a)(f)
Single Pulse, T
amb
=25°C
1ms
100us
R
DS( ON)
Limited
P-channel Safe Operating Area
-V
DS
Drain-Source Voltage (V)
-I
D
DrainCurrent (A)
TYPICAL CHARACTERISTICS
Not Recommended for New Design
Please Use ZXMC3AMCTA

ZXMC3AM832TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET Cmp 30V NP Ch UMOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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