ZC934ATA

1
SEMICONDUCTORS
Device Description
A range of silicon varactor diodes for use in
frequency control and filtering. Featuring closely
controlled CV characteristics and high Q. Low
reverse current ensures very low phase noise
performance. Available in single or dual common
cathode formatin a wide rage of miniature surface
mount packages.
Features
·
Close tolerance C-V characteristics
·
Octave tuning from 0 to 6V
· Low I
R
(typically 200pA)
· Excellent phase noise performance
· High Q
· Range of miniature surface mount packages
Applications
· VCXO and TCXO
·
Wireless communications
·
Pagers
·
Mobile radio
ZC930, ZMV930, ZV931 series
ISSUE 7 - SEPTEMBER 2004
SILICON 12V HYPERABRUPT VARACTOR DIODES
S
O
D
3
2
3
S
O
T
2
3
S
O
D
5
2
3
PINOUT
ZC930, ZMV930, ZV931 series
ISSUE 7 - SEPTEMBER 2004
2
PART Capacitance
V
R
=1V
Capacitance
V
R
=2.5V
Capacitance
V
R
=4V
Minimum Q
V
R
=4V
f=50MHz
MIN. pF MIN. pF MAX. pF MAX. pF
930 8.70 4.30 5.50 2.90 200
931 13.50 6.50 7.80 4.00 300
932 17.00 8.50 10.50 5.50 200
933 42.00 18.00 27.00 12.00 150
933A 42.00 20.25 24.75 12.00 150
934 95.00 40.00 65.00 25.00 80
TUNING CHARACTERISTICS at T
amb
= 25°C
PARAMETER SYMBOL MAX. UNIT
Reverse voltage V
R
12 V
Forward current I
F
100 mA
Power dissipation at T
amb
=25C SOT23 P
tot
330 mW
Power dissipation at T
amb
=25C SOD323 P
tot
330 mW
Power dissipation at T
amb
=25C SOD523 P
tot
250 mW
ABSOLUTE MAXIMUM RATINGS
PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 10uA 12 V
Reverse voltage leakage V
R
= 8V 0.2 100 nA
Temperature coefficient of capacitance V
R
= 3V, f = 1MHz 300 400 ppCm/C
ELECTRICAL CHARACTERISTICS at T
amb
= 25°C
ZC930, ZMV930, ZV931 series
ISSUE 7 - SEPTEMBER 2004
3
TYPICAL CHARACTERISTICS

ZC934ATA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Varactor Diodes Varicap Tuner
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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