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APT20SCD120B

P1-P3P4-P4
050-7702 Rev A 10 - 2012
PRODUCT BENEFITS
• Higher Reliability Systems
• Minimizes or eliminates
snubber
PRODUCT FEATURES
• Zero Recovery Times (t
rr
)
• Popular TO-247 Package or
surface mount D
3
PAK package
• Low Forward Voltage
• Low Leakage Current
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Power Factor Correction (PFC)
APT20SCD120B
APT20SCD120S
1200V 20A
MAXIMUM RATINGS T
C
= 25°C unless otherwise specifi ed.
Microsemi Website - http://www.microsemi.com
Zero Recovery Silicon Carbide Schottky Diode
Symbol Characteristic / Test Conditions Ratings Unit
V
R
Maximum D.C. Reverse Voltage
1200 Volts
V
RRM
Maximum Peak Repetitive Reverse Voltage
V
RWM
Maximum Working Peak Reverse Voltage
I
F
Maximum D.C. Forward current
T
C
= 25°C 68
Amps
T
C
= 135°C 20
I
FRM
Repetitive Peak Forward Suge Current (T
J
= 45°C, t
p
= 10ms, Half Sine Wave)
100
I
FSM
Non-Repetitive Forward Surge Current (T
J
= 25°C, t
p
= 10ms, Half Sine)
220
P
tot
Power Dissipation
T
C
= 25°C 208
W
T
C
= 110°C 66
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150
°C
T
L
Lead Temperature for 10 Seconds 300
Symbol Characteristic / Test Conditions Min Typ Max Unit
V
F
Forward Voltage
I
F
= 20A T
J
= 25°C 1.5 1.8
Volts
I
F
= 20A, T
J
= 150°C 2.2
I
RM
Maximum Reverse Leakage Current
V
R
= 1200V T
J
= 25°C 400
A
V
R
= 1200V, T
J
= 150°C 2000
Q
c
Total Capactive Charge V
R
= 800V, I
F
= 20A, di/dt = -100A/s, T
J
= 25°C 66 nC
C
T
Junction Capacitance V
R
= 0V, T
J
= 25°C, f = 1MHz 1135
pFJunction Capacitance V
R
= 200V, T
J
= 25°C, f = 1MHz 160
Junction Capacitance V
R
= 400V, T
J
= 25°C, f = 1MHz 100
STATIC ELECTRICAL CHARACTERISTICS
1 - Cathode
2 - Anode
Back of Case -Cathode
T
O
-
2
4
7
1
2
D
3
PAK
1
2
APT20SCD120B_S
050-7702 Rev A 10 - 2012
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol Characteristic / Test Conditions Min Typ Max Unit
R
JC
Junction-to-Case Thermal Resistance 0.6 °C/W
W
T
Package Weight
0.22 oz
5.9 g
Torque Maximum Mounting Torque
10 lb·in
1.1 N·m
0
0.10
0.20
0.30
0.40
0.50
0.60
0.70
10
-4
10
-3
10
-2
0.1 1 10 100
10
-5
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Z
JC
, THERMAL IMPEDANCE (°C/W)
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
0
10
20
30
40
50
60
70
80
0 1 2 3 4 5 6 7
0
10
20
30
40
50
60
70
25 50 75 100 125 150
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
I
F
, FORWARD CURRENT (A)
Case Temperature (°C)
FIGURE 3, Maximum Forward Current vs. Case Temperature
I
F
(peak) (A)
1
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
TYPICAL PERFORMANCE CURVES
050-7702 Rev A 10-2012
APT20SCD120B_S
TYPICAL PERFORMANCE CURVES
0
50
100
150
200
250
0 25 50 75 125 150
CASE TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation vs. Case Temperature
P
total
(w)
100
120
140
160
180
200
220
240
260
200 300 400 500 600 700 800
200
400
600
800
900
1200
0 200 400 600 800 1000 1200 1400
0
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600 700 800
V
R
, REVERSE VOLTAGE (V)
Figure 6. Reverse Recovery Charge vs. V
R
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
V
R
, REVERSE VOLTAGE (V)
Figure 5. Reverse Leakage Currents vs. Reverse Voltage
I
R
, REVERSE LEAKAGE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 7. Junction Capacitance vs. Reverse Voltage
C
J
, JUNCTION CAPACITANCE (pF)
25°C
75°C
125°C
150°C
15.85 (.624)
16.05(.632)
18.70 (.736)
19.10 (.752)
1.15 (.045)
1.45 (.057)
5.45 (.215) BSC
(2 Plcs. )
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
2.70 (.106)
2.90 (.114)
0.40 (.016)
0.65 (.026)
Heat Sink (Cathode)
and Leads
are Plated
2.40 (.094)
2.70 (.106)
(Base of Lead)
Cathode
(Heat Sink)
1.90 (.075)
2.10 (.083)
Cathode
Anode
0.020 (.001)
0.250 (.010)
1.20 (.047)
1.40 (.055)
12.40 (.488)
12.70 (.500)
13.30 (.524)
13.60(.535)
1.00 (.039)
1.15(.045)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max .
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
10.90 (.430) BSC
3.50 (.138)
3.81 (.150)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
Cathode
Anode
Cathode
TO-247 Package Outline
D
3
PAK Package Outline
1.016(.040)
Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)
d
if
/d
t
= -200A/s
T
J
= 125°C
P1-P3P4-P4

APT20SCD120B

Mfr. #:
Buy APT20SCD120B
Manufacturer:
Microchip / Microsemi
Description:
Schottky Diodes & Rectifiers Schottky Discrete RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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