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NP40N10VDF-E1-AY

P1-P3P4-P6P7-P9P10-P11
NP40N10YDF, NP40N10VDF, NP40N10PDF Preliminary
R07DS0361EJ0201 Rev.2.01 Page 4 of 9
May 13, 2013
Typical Characteristics (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
0
20
40
60
80
100
120
20
40
60
80
100
140
120
0
dT - Percentage of Rated Power - %
0 25 50 75 100 125 150 175
T
C
- Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0 25 50 75 100 125 150 175
T
C
- Case Temperature - °C
P
T
- Total Power Dissipation - W
FORWARD BIAS SAFE OPERATING AREA
0.1 1 10 100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
1
10
100
1000
T
C
= 25°C
Single Pulse
R
DS(ON)
Limited
(V
GS
= 10V)
PW = 100 μs
1 ms
10 ms
Power Dissipation Limited
Secondary Breakdown Limited
I
D(Pulse)
NP40N10YDF, NP40N10VDF, NP40N10PDF Preliminary
R07DS0361EJ0201 Rev.2.01 Page 5 of 9
May 13, 2013
100 μ 1 m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
0.01
0.1
1
10
100
1000
r
th(t)
- Transient Thermal Resistance - °C/W
R
th(ch-C)
= 1.25°C/W
R
th(ch-A)
= 83.3°C/W
Single Pulse
100 μ 1 m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
0.01
0.1
1
10
100
1000
r
th(t)
- Transient Thermal Resistance - °C/W
R
th(ch-C)
= 1.25°C/W
R
th(ch-A)
= 150°C/W
100 μ 1 m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
0.01
0.1
1
10
100
1000
r
th(t)
- Transient Thermal Resistance - °C/W
R
th(ch-C)
= 1.25°C/W
R
th(ch-A)
= 125°C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10YDF)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10VDF)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (NP40N10PDF)
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
NP40N10YDF, NP40N10VDF, NP40N10PDF Preliminary
R07DS0361EJ0201 Rev.2.01 Page 6 of 9
May 13, 2013
TA =
–
55°C
–
25°C
25°C
75°C
100°C
125°C
150°C
175°C
T
A
= –55°C
–25°C
25°C
75°C
100°C
125°C
150°C
175°C
I
D
= 40 A
20 A
8 A
10 V
5.0 V
V
GS
= 4.5 V
V
GS
= 10 V
5.0 V
4.5 V
FORWARD TRANSFER CHARACTERISTICS
0.001
0.01
0.1
1
10
100
0123 54
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
0
0.5
1.5
2.5
1
2
–100 –50 0 50 100 150 200
T
ch
- Channel Temperature - °C
V
GS(th)
- Gate to Source Threshold Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
10
100
0.01 0.1 1 10 100
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
10
40
60
50
30
20
5
35
45
25
15
30
40
20
10
0
0.1 1 10 100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0 5 10 15 20
V
GS
- Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
40
30
20
10
60
100
90
80
50
70
0462315
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
V
DS
= V
GS
I
D
= 250 μA
Pulsed
Pulsed Pulsed
V
DS
= 10 V
Pulsed
V
DS
= 5 V
Pulsed
P1-P3P4-P6P7-P9P10-P11

NP40N10VDF-E1-AY

Mfr. #:
Buy NP40N10VDF-E1-AY
Manufacturer:
Description:
Power Field-Effect Transistor, 40A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Lifecycle:
New from this manufacturer.
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