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SPZT751T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1 Publication Order Number:
PZT751T1/D
PZT751
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT−223 package which is designed for medium power surface
mount applications.
Features
• High Current
• The SOT−223 Package can be soldered using wave or reflow.
• SOT−223 Package Ensures Level Mounting, Resulting in
Improved Thermal Conduction, and Allows Visual Inspection of
Soldered Joints. The Formed Leads Absorb Thermal Stress During
Soldering, Eliminating the Possibility of Damage to the Die
• NPN Complement is PZT651T1G
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
−60 Vdc
Collector−Base Voltage V
CBO
−80 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current I
C
−2.0 Adc
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
P
D
0.8
6.4
W
mW/°C
Storage Temperature Range T
stg
−65 to 150 °C
Junction Temperature T
J
150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance from Junction−to−
Ambient in Free Air
R
q
JA
156 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
SOT−223 PACKAGE HIGH CURRENT
NPN SILICON TRANSISTOR
SURFACE MOUNT
SOT−223
CASE 318E
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
Device Package Shipping
†
ORDERING INFORMATION
PZT751T1G SOT−223
(Pb−Free)
1,000 / Tape & Ree
l
MARKING DIAGRAM
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
AYW
ZT751G
G
(Note: Microdot may be in either location)
SPZT751T1G SOT−223
(Pb−Free)
1,000 / Tape & Ree
l
1
2
3
4
PZT751
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−60 −
Vdc
Collector−Emitter Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0)
V
(BR)CBO
−80 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 −
Vdc
Base−Emitter Cutoff Current
(V
EB
= −4.0 Vdc)
I
EBO
− −0.1
mAdc
Collector−Base Cutoff Current
(V
CB
= −80 Vdc, I
E
= 0)
I
CBO
− −100
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= −50 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −500 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −1.0 Adc, V
CE
= −2.0 Vdc)
(I
C
= −2.0 Adc, V
CE
= −2.0 Vdc)
h
FE
75
75
75
40
−
−
−
−
−
Collector−Emitter Saturation Voltages
(I
C
= −2.0 Adc, I
B
= −200 mAdc)
(I
C
= −1.0 Adc, I
B
= −100 mAdc)
V
CE(sat)
−
−
−0.5
−0.3
Vdc
Base−Emitter Voltages
(I
C
= −1.0 Adc, V
CE
= −2.0 Vdc)
V
BE(on)
− −1.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= −1.0 Adc, I
B
= −100 mAdc)
V
BE(sat)
− −1.2
Vdc
Current−Gain−Bandwidth
(I
C
= −50 mAdc, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
75 −
MHz
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
PZT751
www.onsemi.com
3
TYPICAL CHARACTERISTICS
I
C
, COLLECTOR CURRENT (mA)
-10 -20 -50 -100 -200 -500
h
FE
, DC CURRENT GAIN
250
0
25
50
75
100
125
200
175
150
225
-1.0 A -2.0 A -4.0 A
V
CE
= -2.0 V
T
J
= 125°C
25°C
-55°C
Figure 1. Typical DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0
Figure 2. On Voltages
-50
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.4
-0.8
-0.6
-0.2
-100 -200 -500 -1.0 A -2.0 A -4.0 A
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 2.0 V
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
I
C
= -10 mA I
C
= -100 mA
I
C
= -500 mA I
C
= -2.0 A
-0.05
-1.0
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 -500
P1-P3P4-P4

SPZT751T1G

Mfr. #:
Buy SPZT751T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SOT223 HC XSTR PNP 60V
Lifecycle:
New from this manufacturer.
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