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BAS21GWX

P1-P3P4-P6P7-P9P10-P11
Nexperia
BAS21GW
High-voltage switching diode
BAS21GW All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 15 June 2017 4 / 11
aaa-025640
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0.33
0.75
0.05
0.02
0.20
0.50
0.10
0.25
0
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-025641
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0.02
0.05
0.10
0.20
0.25
0.33
0.50
0.75
0
FR4 PCB, mounting pad for cathode 1 cm
2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
BAS21GW
High-voltage switching diode
BAS21GW All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 15 June 2017 5 / 11
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- - 1 VV
F
forward voltage
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- - 1.25 V
V
R
= 200 V; pulsed; T
j
= 25 °C - - 100 nAI
R
reverse current
V
R
= 200 V; pulsed; T
j
= 150 °C - - 100 µA
C
d
diode capacitance V
R
= 0 V; f = 1 MHz; T
j
= 25 °C - - 2 pF
t
rr
reverse recovery time I
F
= 10 mA; I
R
= 10 mA; R
L
= 100 Ω;
I
R(meas)
= 1 mA; T
j
= 25 °C
- - 50 ns
V
F
(V)
0 1.61.20.4 0.8
006aab212
200
400
600
I
F
(mA)
0
(1) (3)
(4)
(2)
(1) T
amb
= 150° C
(2) T
amb
= 85° C
(3) T
amb
= 25° C
(4) T
amb
= -40° C
Fig. 3. Forward current as a function of forward
voltage; typical values
006aab213
10
2
I
R
(µA)
V
R
(V)
0 250200100 15050
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
(4)
(1)
(2)
(3)
(1) T
amb
= 150° C
(2) T
amb
= 85° C
(3) T
amb
= 25° C
(4) T
amb
= -40° C
Fig. 4. Reverse current as a function of reverse
voltage; typical values
Nexperia
BAS21GW
High-voltage switching diode
BAS21GW All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 15 June 2017 6 / 11
mbg447
0 4 862
V
R
(V)
1.0
0.8
0.2
0.6
0.4
C
d
(pF)
f = 1 MHz
T
j
= 25 °C.
Fig. 5. Diode capacitance as a function of reverse
voltage; typical values.
mbg703
10
1
10
2
I
FSM
(A)
10
- 1
t
p
(µs)
1 10
4
10
3
10 10
2
Based on square wave currents.
T
j(init)
= 25 °C
Fig. 6. Non-repetitive peak forward current as a
function of pulse duration; maximum values
11. Test information
(1) I
R
= 1 mA
Fig. 7. Reverse recovery time test circuit and waveforms
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
P1-P3P4-P6P7-P9P10-P11

BAS21GWX

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Buy BAS21GWX
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching High-voltage switching diode - 3k Reel
Lifecycle:
New from this manufacturer.
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