LC75700T
www.onsemi.com
2
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
DD
max V
DD
–0.3 to +7.0 V
Input voltage
V
IN
1 CE, CL, DI, RES –0.3 to +7.0
V
V
IN
2 OSC, KI1 to KI5 –0.3 to V
DD
+ 0.3
Output voltage
V
OUT
1 DO –0.3 to +7.0
V
V
OUT
2 OSC, KS1 to KS6, P1 to P4 –0.3 to V
DD
+ 0.3
Output current
I
OUT
1 KS1 to KS6 1
mA
I
OUT
2 P1 to P4 5
Allowable power dissipation Pd max Ta = 85°C 150 mW
Operating temperature Topr –40 to +85 °C
Storage temperature Tstg –50 to +150 °C
Specifications
Absolute Maximum Ratings at Ta = 25°C, V
SS
= 0 V
Parameter Symbol Conditions
Ratings
Unit
min typ max
Supply voltage V
DD
V
DD
2.7 5.0 5.5 V
Input high level voltage
V
IH
1 CE, CL, DI, RES 0.8 V
DD
5.5
V
V
IH
2 KI1 to KI5 0.6 V
DD
V
DD
Input low level voltage V
IL
CE, CL, DI, RES, KI1 to KI5 0 0.2 V
DD
V
Recommended external resistance Rosc OSC 39 k
Recommended external capacitance Cosc OSC 1000 pF
Guaranteed oscillator range fosc OSC 19 38 76 kHz
Low level clock pulse width tøL CL See figure 1. 160 ns
High level clock pulse width tøH CL See figure 1. 160 ns
Data setup time tds DI, CL See figure 1. 160 ns
Data hold time tdh DI, CL See figure 1. 160 ns
CE wait time tcp CE, CL See figure 1. 160 ns
CE setup time tcs CE, CL See figure 1. 160 ns
CE hold time tch CE, CL See figure 1. 160 ns
DO output delay time tdc DO R
PU
= 4.7 k, C
L
= 10 pF*1 See figure 1. 1.5 μs
DO rise time tdr DO R
PU
= 4.7 k, C
L
= 10 pF*1 See figure 1. 1.5 μs
Allowable Operating Ranges at Ta = –40 to +85°C, V
SS
= 0 V
Note: *1. Since DO is an open-drain output, these times depend on the values of the pull-up resistor R
PU
and the load capacitance C
L
.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
