TIC246 SERIES
SILICON TRIACS
1
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
High Current Triacs
16 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
125 A Peak Current
Max I
GT
of 50 mA (Quadrants 1 - 3)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-
state current. Surge may be repeated after the device has returned to original thermal equilibrium.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC246D
TIC246M
TIC246S
TIC246N
V
DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) I
T(RMS)
16 A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) I
TSM
125 A
Peak gate current I
GM
±1 A
Operating case temperatur
e range T
C
-40 to +110 °C
Storage temperature range T
stg
-40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds T
L
230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0 T
C
= 110°C ±2 mA
I
GT
Gate trigger
current
V
supply
= +12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
R
L
= 10 Ω
R
L
= 10 Ω
R
L
= 10 Ω
R
L
= 10 Ω
t
p(g)
> 20 μs
t
p(g)
> 20 μs
t
p(g)
> 20 μs
t
p(g)
> 20 μs
12
-19
-16
34
50
-50
-50
mA
V
GT
Gate trigger
voltage
V
supply
= +12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
R
L
= 10 Ω
R
L
= 10 Ω
R
L
= 10 Ω
R
L
= 10 Ω
t
p(g)
> 20 μs
t
p(g)
> 20 μs
t
p(g)
> 20 μs
t
p(g)
> 20 μs
0.8
-0.8
-0.8
0.9
2
-2
-2
2
V
V
T
On-state voltage I
TM
= ±22.5 A I
G
= 50mA (see Note 4) ±1.4 ±1.7 V
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t
p
= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
This series is currently available,
but not recommended for new
designs.
