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SI4682DY-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73317
S11-0209-Rev. D, 14-Feb-11
Vishay Siliconix
Si4682DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
150
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
Variance (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0246810
I
D
= 11 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
J
= 25 °C
T
J
= 125 °C
0
120
200
40
80
Power (W)
Time (s)
160
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
1 ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
Limited by
R
DS(on)*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Document Number: 73317
S11-0209-Rev. D, 14-Feb-11
www.vishay.com
5
Vishay Siliconix
Si4682DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
4
8
12
16
20
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Single Pulse Avalanche Capability
100
1
0.00001 0.001 0.1 1
0.1
10
0.0001
T
A
- Time In Avalanche (s)
I
C
- Peak Avalanche Current (A)
T
A
=
L· I
D
BV V
DD
0.01
-
www.vishay.com
6
Document Number: 73317
S11-0209-Rev. D, 14-Feb-11
Vishay Siliconix
Si4682DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73317
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10 10
-
3
10
-
2
11010
-
1
-
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P7

SI4682DY-T1-E3

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Manufacturer:
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Description:
MOSFET N-CH 30V 16A 8-SOIC
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