HERAF1001G - HERAF1008G
CREAT BY ART
- Glass passivated chip junction
- High efficiency, Low VF
- High surge current capability
- High current capability
- High reliability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 300 400 600 800 1000 V
V
RMS
35 70 140 210 280 420 560 700 V
V
DC
50 100 200 300 400 600 800 1000 V
I
F(AV)
A
t
rr
ns
C
J
pF
R
θJC
°C/W
T
J
°C
T
STG
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
Version: H1511
Typical thermal resistance 2
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Maximum reverse recovery time (Note 2) 50 80
Typical junction capacitance (Note 3) 80 60
Maximum reverse current @ rated V
R
T
J
=25°C
I
R
10
μA
T
J
=125°C
400
A
Maximum instantaneous forward voltage (Note 1)
I
F
= 10 A
V
F
1.0 1.3 1.7 V
Maximum DC blocking voltage
Maximum average forward rectified current 10
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
150
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL
HERAF
1001G
HERAF
1002G
Maximum RMS voltage
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
HERAF
1005G
HERAF
1006G
HERAF
1007G
HERAF
1008G
UNIT
Taiwan Semiconductor
10A, 50V - 1000V Isolated Glass Passivated Hi
h Efficient Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AC
HERAF
1003G
HERAF
1004G
MECHANICAL DATA
Case: ITO-220AC
Polarity: As marked
1
2
