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MMBTA64LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 6
1 Publication Order Number:
MMBTA63LT1/D
MMBTA63LT1G,
MMBTA64LT1G,
SMMBTA64LT1G
Darlington Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CES
−30 Vdc
Collector−Base Voltage V
CBO
−30 Vdc
Emitter−Base Voltage V
EBO
−10 Vdc
Collector Current − Continuous I
C
−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBTA63LT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
COLLECTOR 3
BASE
1
EMITTER 2
MMBTA64LT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2x M G
G
2x = Device Code
x = U for MMBTA63LT1G
x = V for MMBTA64LT1G
SMMBTA64LT1G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
SMMBTA64LT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
www.onsemi.com
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −100 mAdc)
V
(BR)CEO
−30 −
Vdc
Collector Cutoff Current
(V
CB
= −30 Vdc)
I
CBO
− −100
nAdc
Emitter Cutoff Current
(V
EB
= −10 Vdc)
I
EBO
− −100
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
MMBTA63
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
MMBTA64, SMMBTA64
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc)
MMBTA63
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc)
MMBTA64, SMMBTA64
h
FE
5,000
10,000
10,000
20,000
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −100 mAdc, I
B
= −0.1 mAdc)
V
CE(sat)
− −1.5
Vdc
Base − Emitter On Voltage
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc)
V
BE(on)
− −2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
125 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
www.onsemi.com
3
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
200
-1.0
2.0
h
FE
, DC CURRENT GAIN (X1.0 K)
T
A
= 125°C
25°C
-55°C
V
CE
= -2.0 V
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -100 -300
100
70
50
30
20
10
7.0
5.0
3.0
-0.3 -0.5 -0.7 -70 -200
-5.0 V
-10 V
I
B
, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
-0.6
T
A
= 25°C
I
C
=
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.1-0.2 -1 -2 -5 -10 -20 -50 -100-200-500-0.5 -1K-2K -10K
-10 mA -50 mA -100 mA -175 mA -300 mA
-5K
I
C
, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
V, VOLTAGE (VOLTS)
-2.0
0
-0.3
T
A
= 25°C
V
BE(on)
@ V
CE
= -5.0 V
-1.6
-1.2
-0.8
-0.4
V
CE(sat)
@ I
C
/I
B
= 1000
I
C
/I
B
= 100
-0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 -100 -200 -300
10
4.0
3.0
2.0
0.1
Figure 4. High Frequency Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
CE
= -5.0 V
f = 100 MHz
T
A
= 25°C
|h
FE
|, HIGH FREQUENCY CURRENT GAIN
1.0
0.4
0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1K
V
BE(sat)
@ I
C
/I
B
= 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
0.001
1
0.1
0.01
1.0 1000.01 10
10 ms
Single Pulse Test
@ T
A
= 25°C
Thermal Limit
100 ms
I
C
, COLLECTOR CURRENT (A)
1 ms
1 s
0.1
P1-P3P4-P4

MMBTA64LT1G

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Buy MMBTA64LT1G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 500mA 30V PNP
Lifecycle:
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