VS-100BGQ100
www.vishay.com
Vishay Semiconductors
Revision: 16-Jun-15
1
Document Number: 94581
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 100 A
FEATURES
• 175 °C max. operating junction temperature
• High frequency operation
• Low forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC
®
-JESD 47
• PowerTab
®
package
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-100BGQ100 Schottky rectifier has been optimized
for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
PRODUCT SUMMARY
Package PowerTab
®
I
F(AV)
100 A
V
R
100 V
V
F
at I
F
0.82 V
I
RM
180 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
9 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 100 A
T
C
124 °C
V
RRM
100 V
I
FSM
t
p
= 5 μs sine 6300 A
V
F
100 A
pk
(typical) 0.77 V
T
J
125 °C
T
J
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 100BGQ100 UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
C
= 124 °C, rectangular waveform 100 A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
6300
A
10 ms sine or 6 ms rect. pulse 800
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 4.5 mH 9 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
